Effect of grain-boundary stabilization on the strength, thermal conductivity, and dielectric properties of aluminum nitride

2000 ◽  
Vol 36 (5) ◽  
pp. 504-507 ◽  
Author(s):  
S. N. Ivanov ◽  
L. M. Zhukova ◽  
Ya. M. Soifer ◽  
E. N. Khazanov ◽  
A. V. Taranov
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Grain Boundary ◽  
Aluminum Nitride ◽  
Boundary Stabilization

Metallization Behavior in Aluminum Nitride Electronic Packages

1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Aluminum Nitride ◽  
High Density ◽  
High Thermal Conductivity ◽  
Electronic Packages ◽  
Oxide Ceramics ◽  
Chemical Behavior ◽  
Hermetic Seal ◽  
Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

scholarly journals Research on the thermal conductivity and dielectric properties of AlN and BN co-filled addition-cure liquid silicone rubber composites

RSC Advances ◽  
2019 ◽  
Vol 9 (49) ◽  
pp. 28851-28856 ◽  
Author(s):  
Zhenzhen Ou ◽  
Feng Gao ◽  
Huaijun Zhao ◽  
Shumeng Dang ◽  
Lingjian Zhu
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Boron Nitride ◽  
Aluminum Nitride ◽  
Silicone Rubber ◽  
Conductive Filler ◽  
Matrix Composites ◽  
Rubber Composites ◽  
Liquid Silicone Rubber ◽  
Liquid Silicone

The present work aims at studying the thermal and dielectric properties of addition-cure liquid silicone rubber (ALSR) matrix composites using boron nitride (BN) and aluminum nitride (AlN) as a hybrid thermal conductive filler.

Metallization Issues in Advanced Ceramic Substrates:- Microstructural. Microchemistry and Thermal Conductivity in Aln

1989 ◽  
Vol 154 ◽  
Author(s):  
Alistair D. Westwood ◽  
Michael R. Notis
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundary ◽  
Aluminum Nitride ◽  
Grain Boundaries ◽  
Thick Film ◽  
Interface Morphology ◽  
Ceramic Substrates ◽  
Microstructural Study ◽  
Boundary Film ◽  
Manganese Aluminum

AbstractMicrochemical and microstructural study has been carried out on the tungsten-aluminum nitride (W-AlN) thick film metallization interface. A reaction has been found to occur with the formation of precipitates at AlN grain boundaries and also within the AlN grains; a thin crystalline grain boundary film was also observed. The interface morphology and chemistry is compared to the molybdenum/manganese-aluminum nitride (MoMn-AlN) interface. The effects of morphology and microchemical variations upon thermal conductivity are discussed.

Improvement of thermal conductivity of rigid polyurethane foams with aluminum nitride filler

2021 ◽  
pp. 026248932198897
Author(s):  
Serife Akkoyun ◽  
Meral Akkoyun
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Polyurethane Foams ◽  
Thermal Transitions ◽  
Rigid Polyurethane Foams ◽  
Noticeable Increase ◽  
Polyurethane Composite ◽  
Composite Foams ◽  
Step Procedure ◽  
Electrical Conductivities

The aim of this work is the fabrication of electrically insulating composite rigid polyurethane foams with improved thermal conductivity. Therefore, this study is focused on the effect of aluminum nitride (AlN) on the thermal and electrical conductivities of rigid polyurethane foams. For this purpose, aluminum nitride/rigid polyurethane composite foams were prepared using a three-step procedure. The electrical and thermal conductivities of the foams were characterized. The thermal transitions, mechanical properties and morphology of the foams were also examined. The results reveal that AlN induces an increase of the thermal conductivity of rigid polyurethane foam of 24% which seems to be a relatively noticeable increase in polymeric foams. The low electrical conductivity of the foams is preserved.

scholarly journals Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3294
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Potential Barrier ◽  
Charge Compensation ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Potential Barrier Height

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0−0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

Thermal stable honokiol-derived epoxy resin with reinforced thermal conductivity, dielectric properties and flame resistance

2021 ◽  
Vol 412 ◽  
pp. 128647
Author(s):  
Jingjing Meng ◽  
Pengfei Chen ◽  
Rui Yang ◽  
Linli Dai ◽  
Cheng Yao ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Epoxy Resin ◽  
Flame Resistance ◽  
Thermal Stable

Improving thermal conductivity of aluminum nitride ceramics by refining microstructure

2000 ◽  
Vol 43 (3) ◽  
pp. 114-117 ◽  
Author(s):  
Yaocheng Liu ◽  
Heping Zhou ◽  
Yin Wu ◽  
Liang Qiao
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Nitride Ceramics

Enhanced dielectric properties and thermal conductivity of Al/CNTs/PVDF ternary composites

2015 ◽  
Vol 34 (14) ◽  
pp. 1126-1135 ◽  
Author(s):  
Zijun Wang ◽  
Wenying Zhou ◽  
Xuezhen Sui ◽  
Lina Dong
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties
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