scholarly journals Transient thermal process induced by swift heavy ions: Defect annealing and defect creation in Fe and Ni

1999 ◽  
Vol 22 (3) ◽  
pp. 671-677 ◽  
Author(s):  
Ch. Dufour ◽  
Z G Wang ◽  
E Paumier ◽  
M Toulemonde
Keyword(s):  
Heavy Ions ◽  
Thermal Process ◽  
Swift Heavy Ions ◽  
Defect Annealing ◽  
Defect Creation ◽  
Transient Thermal

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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