Temperature effects in the dynamics of a centre with nearly degenerate levels and localized phase transition

1979 ◽  
Vol 49 (2) ◽  
pp. 307-313 ◽  
Author(s):  
N. Kristoffel
1977 ◽  
Vol 18 (2) ◽  
pp. 213-216 ◽  
Author(s):  
V. A. Varnek ◽  
S. P. Gabuda ◽  
B. I. Obmoin

2000 ◽  
Vol 112 (23) ◽  
pp. 10608-10614 ◽  
Author(s):  
Hideki Seto ◽  
Daisuke Okuhara ◽  
Youhei Kawabata ◽  
Takayoshi Takeda ◽  
Michihiro Nagao ◽  
...  

1983 ◽  
Vol 22 ◽  
Author(s):  
P.T.T. Wong ◽  
H.H. Mantsch

Sodium oleate is practically insoluble in water at room temperature. Yet, when heated above the critical micellization temperature (cmt), its solubility increases rapidly and an isotropic optically clear micellar solution is formed. Upon cooling below the critical coagelization temperature (cct), the micellar phase transforms to an opaque curd, the coagel phase. The structural changes and the nature of this phase transition are, however, not well characterized.


1990 ◽  
Vol 201 ◽  
Author(s):  
Fulin Xiong ◽  
C. J. Tsai ◽  
T. Vreeland ◽  
T. A. Tombrello

AbstractAn experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, and substrate temperature effects in MeV-ion-implanted III-V compound semiconductor crystals is presented. A comparison has been made between the GaAs and InP systems, which have been implanted with 2 MeV oxygen ions at either room temperature (RT) or near liquid nitrogen temperature (LT). A strong in situ dynamic annealing has been found in the RT implanted GaAs, and the LT implanted GaAs exhibits heterogeneous (at the end-of-range of the ions) and homogeneous (at the subsurface region) c-a phase transitions. In InP crystals, in situ annealing is much less pronounced in RT implantation, and dose-dependent damage nucleation and layer-by-layer amorphization take place. LT implantation results in lattice disordering and phase transition with a critical dose at least one order lower than that for GaAs. The mechanisms and kinetics of lattice disordering by ion irradiation are also discussed.


1993 ◽  
Vol 04 (06) ◽  
pp. 1195-1204
Author(s):  
F. KARSCH ◽  
M. L. LAURSEN ◽  
T. NEUHAUS ◽  
B. PLACHE

We investigate vacuum transitions in lattice higgs models at finite temperature. The 2 dimensional U(1) Higgs model is used as a toy model. In the 4 dimensional SU(2) Higgs model the region of the phase transition and temperatures above it are considered. The couplings (β, κ, λ) = (2.25, 0.27, 0.5) and (8.0, 0.12996, 0.0017235) correspond to masses in lattice units (aσmH, aσmw) of (0.02, 0.05) and (0.2,0.2), respectively. The algorithm is described and a parallelized version is proposed. Taking the influence of the finite lattice into account we discuss temperature effects. We compare our results with perturbative estimates and claim that they link low and high temperature approximations.


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