scholarly journals Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ION-Implanted III-V Compound Semiconductors

1990 ◽  
Vol 201 ◽  
Author(s):  
Fulin Xiong ◽  
C. J. Tsai ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Phase Transition ◽  
Substrate Temperature ◽  
Temperature Effects ◽  
Ion Irradiation ◽  
Liquid Nitrogen Temperature ◽  
Layer By Layer ◽  
Semiconductor Crystals ◽  
Kinetics Of ◽  
Ion Implanted

AbstractAn experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, and substrate temperature effects in MeV-ion-implanted III-V compound semiconductor crystals is presented. A comparison has been made between the GaAs and InP systems, which have been implanted with 2 MeV oxygen ions at either room temperature (RT) or near liquid nitrogen temperature (LT). A strong in situ dynamic annealing has been found in the RT implanted GaAs, and the LT implanted GaAs exhibits heterogeneous (at the end-of-range of the ions) and homogeneous (at the subsurface region) c-a phase transitions. In InP crystals, in situ annealing is much less pronounced in RT implantation, and dose-dependent damage nucleation and layer-by-layer amorphization take place. LT implantation results in lattice disordering and phase transition with a critical dose at least one order lower than that for GaAs. The mechanisms and kinetics of lattice disordering by ion irradiation are also discussed.

Amorphization Kinetics of Zr (Cr,Fe)2 Under Ion Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
A. T. Motta ◽  
L. M. Howe ◽  
P. R. Okamoto
Keyword(s):  
Neutron Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Matrix Interface ◽  
Thin Foils ◽  
Intermetallic Precipitates ◽  
Kinetics Of

ABSTRACTThin foils of Zircaloy-4 were irradiated with 350 KeV 40Ar ions in the dual ion beam/HVEM facility at Argonne National Laboratory at 300 – 650 K. The irradiation-induced araorphization of the intermetallic precipitates Zr (Cr, Fe)2 and Zr2 (Ni, Fe) was studied in situ. For Zr (Cr,Fe)2 precipitates the dose-to-amorphization was found to increase exponentially with temperature, with a critical temperature of about 650 K. The amorphization morphology was shown to be homogeneous, with no preferential site for nucleation, in contrast to neutron-irradiation amorphization which started at the precipitate-matrix interface. For Zr2 (Ni,Fe) precipitates it was found that amorphization occurred at 550 K and 600 K, whereas in neutron irradiation no amorphization has been observed at those temperatures. The results are discussed in the context of the previous experimental results of neutron and electron irradiation and likely amorphization mechanisms are proposed.

In Situ Kinetics of Layer-by-Layer Assembled Nonlinear-Optical-Active Amphiphiles from Dynamic Surface Force Measurements

Langmuir ◽  
2004 ◽  
Vol 20 (20) ◽  
pp. 8735-8739 ◽  
Author(s):  
Niña G. Caculitan ◽  
Paul H. Scudder ◽  
Analiz Rodriguez ◽  
Joanna L. Casson ◽  
Hsing-Lin Wang ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Surface Force ◽  
Layer By Layer ◽  
Force Measurements ◽  
Dynamic Surface ◽  
Kinetics Of

scholarly journals Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals

1991 ◽  
Vol 69 (5) ◽  
pp. 2964-2969 ◽  
Author(s):  
Fulin Xiong ◽  
C. J. Tsai ◽  
T. Vreeland ◽  
T. A. Tombrello ◽  
C. L. Schwartz ◽  
...  
Keyword(s):  
Phase Transition ◽  
Substrate Temperature ◽  
Strain Field ◽  
Lattice Strain ◽  
Oxygen Ion ◽  
Influence Of Substrate ◽  
Ion Implanted

scholarly journals Kinetics of deuteration of the Pd0.772Ag0.228 alloy with α/β phase transition by in-situ neutron diffraction

2019 ◽  
Vol 790 ◽  
pp. 502-508 ◽  
Author(s):  
Michele Catti ◽  
Oscar Fabelo ◽  
Alessandra Filabozzi ◽  
Antonino Pietropaolo ◽  
Alessia Santucci ◽  
...  
Keyword(s):  
Phase Transition ◽  
Neutron Diffraction ◽  
Β Phase ◽  
In Situ Neutron Diffraction ◽  
Kinetics Of

Direct Observation of Single Displacement Cascade in Pyrochlore by Tv-Rate In-Situ TEM and Ex-Situ HRTEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 408-409
Author(s):  
J. Lian ◽  
L. M. Wang ◽  
S. X. Wang ◽  
R. C. Ewing
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Ex Situ ◽  
In Situ Tem ◽  
Direct Impact ◽  
Displacement Cascade ◽  
Amorphous Domain ◽  
Rapid Kinetics ◽  
Kinetics Of

The ion irradiation-induced crystalline-to-amorphous transformation has been studied in many complex ceramics. Direct impact amorphization has been considered to be one of the fundamental amorphization mechanisms for complex ceramics under heavy ion irradiation . Based on the directimpact model, a highly energetic incident ion transfers its kinetic energy to the target as a thermal spike within 10“13 sec creating a “molten-like” displacement cascade, typically nanometer-scaled in diameter (as indicated by the result of a computer simulation in Fig. 1). This “molten” zone quickly quenches to a small amorphous domain within a few pico-seconds. Epitaxial recrystallization occurs around the amorphous/crystalline interface, so that the size of amorphous domains decrease with time. The accumulation and overlap of small amorphous domains eventually leads to complete amorphization of the irradiated material. Although the in-situTEM technique with the setup shown in Fig. 2 has been extensively applied to the study of the amorphization process in complex ceramics, most of the previous studies relied on in-situobservation of the electron diffraction pattern, and there has been a lack of solid evidence of direct impact amorphization due to the small nature of the cascades and the rapid kinetics of its evolution.

Ion Irradiation-Induced Amorphization in the MgO-Al2O3-SiO2 System: A Cascade Quenching Model

1996 ◽  
Vol 439 ◽  
Author(s):  
S. X. Wang ◽  
L. M. Wang ◽  
R. C. Ewing
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Glass Formation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Simple Relation ◽  
Quantitative Parameter ◽  
System A ◽  
Transmission Electron

AbstractThe ion beam-induced crystalline-to-amorphous transition was studied for crystalline phases in the MgO-A12O3-SiO 2 system. Samples were irradiated with 1.5 MeV Xe+ at temperatures from 15 to 1023 K, and the dose required for amorphization was determined by in situ transmission electron microscopy. Based on a cascade quenching model, we propose that irradiation-induced amorphization is closely related to glass formation. The rate of crystallization from a melt is the controlling factor in determining the susceptibility to amorphization and glass formation. From the analysis of cascade quenching evolution, we have derived a simple relation between amorphization dose and temperature. A quantitative parameter, S0, that describes the susceptibility to amorphization is derived that considers the crystalline structure, field strength, and phase transition temperature.

Crystal Nucleation in Amorphous Si Thin Films During Ion Irradiation

1990 ◽  
Vol 187 ◽  
Author(s):  
James S. Im ◽  
Harry A. Atwater
Keyword(s):  
Nucleation Rate ◽  
Ion Irradiation ◽  
High Energy ◽  
Crystal Nucleation ◽  
Transmission Electron ◽  
Crystal Transition ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

AbstractThe nucleation and transformation kinetics of the amorphous-to-crystal transition in Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T = 480–580°C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting homogeneous nucleation. A significant enhancement in nucleation rate during high energy ion irradiation (6 orders of magnitude) was observed as compared with thermal crystallization, with an apparent activation energy of Qn = 3.9 ± 0.75 eV. Independent analyses of the temperature dependence of the incubation time, the crystal growth rate, and nucleation rate suggest that interface rearrangement kinetics and not the thermodynamic barrier to crystallization, are affected by ion irradiation.

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