scholarly journals Alcohol sensing of tin oxide thin film prepared by sol-gel process

2002 ◽  
Vol 25 (3) ◽  
pp. 231-234 ◽  
Author(s):  
Sunita Mishra ◽  
C. Ghanshyam ◽  
Nathai Ram ◽  
Satinder Singh ◽  
R. P. Bajpai ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Sol Gel Process

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors

2011 ◽  
Vol 99 (15) ◽  
pp. 152102 ◽  
Author(s):  
Seok-Jun Seo ◽  
Jun Hyuck Jeon ◽  
Young Hwan Hwang ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Zinc Tin Oxide

Effects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistors

2016 ◽  
Vol 99 (12) ◽  
pp. 4000-4006 ◽  
Author(s):  
Miguel H. Boratto ◽  
Luis V. A. Scalvi ◽  
Lyudmila V. Goncharova ◽  
Giovanni Fanchini
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film

scholarly journals Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Oxide Thin Film ◽  
Coating Technique ◽  
Materials Used ◽  
Film Making

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide

On the Microstructure and Electrical Properties of Undoped and Antimony- Doped Tin Oxide Thin Film Deposited by Sol-Gel Process

2007 ◽  
Vol 280-283 ◽  
pp. 835-838
Author(s):  
Gang Du ◽  
Dao Li Zhang ◽  
Lan Zhao ◽  
Jian Mei Xu ◽  
Dong Xiang Zhou
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Tin Oxide ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Coated Glass Substrate ◽  
Sol Gel Process ◽  
Different Temperatures ◽  
Tin Oxide Films

Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Ω/□

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