Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure

2003 ◽  
Vol 20 (6) ◽  
pp. 1134-1137 ◽  
Author(s):  
Rak Jun Choi ◽  
Yoon Bong Hahn ◽  
Hyun-Wook Shim ◽  
Eun-Kyung Suh ◽  
Chang Hee Hong ◽  
...  
2017 ◽  
Vol 4 (10) ◽  
pp. 105902
Author(s):  
T A Komissarova ◽  
M Yu Chernov ◽  
V A Solov’ev ◽  
B Ya Meltser ◽  
P N Brunkov ◽  
...  

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Amano ◽  
T. Takeuchi ◽  
S. Sota ◽  
H. Sakai ◽  
I. Akasaki

ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.


2010 ◽  
Vol 207 (6) ◽  
pp. 1383-1385 ◽  
Author(s):  
Alexander Polyakov ◽  
Anatoliy Govorkov ◽  
Nikolay Smirnov ◽  
Alexander Markov ◽  
In-Hwan Lee ◽  
...  

2003 ◽  
Vol 67-68 ◽  
pp. 214-220 ◽  
Author(s):  
S. Zankovych ◽  
I. Maximov ◽  
I. Shorubalko ◽  
J. Seekamp ◽  
M. Beck ◽  
...  

2015 ◽  
Vol 212 (5) ◽  
pp. 925-929 ◽  
Author(s):  
Tongxing Yan ◽  
Juan He ◽  
Wei Yang ◽  
Kamran Rajabi ◽  
Weihua Chen ◽  
...  

2013 ◽  
Vol 47 (9) ◽  
pp. 1203-1208 ◽  
Author(s):  
R. A. Khabibullin ◽  
G. B. Galiev ◽  
E. A. Klimov ◽  
D. S. Ponomarev ◽  
I. S. Vasil’evskii ◽  
...  

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