Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure
2003 ◽
Vol 20
(6)
◽
pp. 1134-1137
◽
Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
2010 ◽
Vol 207
(6)
◽
pp. 1383-1385
◽
Keyword(s):
2003 ◽
Vol 67-68
◽
pp. 214-220
◽
1998 ◽
pp. 207-212
◽
2015 ◽
Vol 212
(5)
◽
pp. 925-929
◽
Keyword(s):