Influence of sputtering gas pressure on the LiCoO2 thin film cathode post-annealed at 400 °C

2006 ◽  
Vol 23 (5) ◽  
pp. 832-837 ◽  
Author(s):  
Ho Young Park ◽  
Sang Cheol Nam ◽  
Young Chang Lim ◽  
Kyu Gil Choi ◽  
Ki Chang Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Pressure

Tuning of magnetization dynamics in sputtered CoFeB thin film by gas pressure

2012 ◽  
Vol 111 (7) ◽  
pp. 07A304 ◽  
Author(s):  
Feng Xu ◽  
Qijun Huang ◽  
Zhiqin Liao ◽  
Shandong Li ◽  
C. K. Ong
Keyword(s):  
Thin Film ◽  
Gas Pressure ◽  
Magnetization Dynamics

Thermal Conductivity of ZIF-8 Thin-Film under Ambient Gas Pressure

2017 ◽  
Vol 9 (34) ◽  
pp. 28139-28143 ◽  
Author(s):  
Boya Cui ◽  
Cornelius O. Audu ◽  
Yijun Liao ◽  
SonBinh T. Nguyen ◽  
Omar K. Farha ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Gas Pressure ◽  
Ambient Gas

scholarly journals Optimization of Electrical and Morphological Properties of MCrAlY thin films deposited by DC magnetron sputtering using Taguchi method

2018 ◽  
Vol 8 (6) ◽  
Author(s):  
Vinaya B C ◽  
K M Narayanappa ◽  
B S Praveen Kumar
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Time ◽  
Research Work ◽  
Gas Pressure ◽  
Morphological Properties ◽  
Physical Parameters ◽  
Sputtering Power

The objective of the research work was to optimize and standardize sputtering parameters based on physical parameters and electrical properties of the coatings. The experimental and statistical investigation was conducted for optimizing the sputtering parameters. The sputtering parameters were selected as sputtering power, working gas pressure, substrate temperature and deposition time. For coating of MCrAlY thin film on a borofloat glass substrate, the electrolytic MCrAlY target was used based on a design of experiment layout. The thin film coatings were characterized for film thickness and surface roughness. The optimum conditions for maximum thickness and minimum surface roughness are sputtering power (17.57 W), working gas pressure (5x10-3mbar), substrate temperature (100˚C) and deposition time (32 min). The ANOVA results for film thickness showed the contribution of deposition time (93.92) followed by working pressure (3.26 %), substrate temperature (2.052 %) and power (0.646%)

Influence of Reactive Gas Pressure on the Properties of Thin Film Ta2O5

1987 ◽  
Vol 26 (Part 1, No. 3) ◽  
pp. 347-351 ◽  
Author(s):  
Utis Teravaninthorn ◽  
Yuji Miyahara ◽  
Toyosaka Moriizumi
Keyword(s):  
Thin Film ◽  
Gas Pressure ◽  
Reactive Gas

scholarly journals Non-Equilibrium Ionization Growth In Molecular Hydrogen

1966 ◽  
Vol 19 (6) ◽  
pp. 795 ◽  
Keyword(s):  
Thin Film ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Molecular Hydrogen ◽  
Gas Pressure ◽  
Spatial Growth ◽  
Non Equilibrium

A thin-film cathode is used in an examination of the spatial growth of ionization in molecular hydrogen at high values of the parameter E/p (E is the electric field strength in V/cm; p is the gas pressure in torr at 0�C). Particular attention is given to

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