Technological experiments and mathematical modeling of the fluid dynamics and heat transfer in gallium arsenide single-crystal growth processes

1998 ◽  
Vol 33 (1) ◽  
pp. 110-116 ◽  
Author(s):  
V. G. Zakharov ◽  
V. G. Kosushkin ◽  
S. A. Nikitin ◽  
V. I. Polezhaev
Keyword(s):  
Mathematical Modeling ◽  
Heat Transfer ◽  
Fluid Dynamics ◽  
Gallium Arsenide ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Growth Processes

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 283-288 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Integrated Approach ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Intrinsic Point Defect ◽  
Formation Mechanisms ◽  
Growing Conditions

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

New Crucible Design for SiC Single Crystal Growth by Sublimation

2000 ◽  
Vol 640 ◽  
Author(s):  
Shin-ichi Nishizawa ◽  
Hirotaka Yamaguchi ◽  
Tomohisa Kato ◽  
M. Nasir Khan ◽  
Kazuo Arai ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Crystal Growth ◽  
Single Crystal ◽  
Flat Surface ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Bulk Single Crystal ◽  
High Quality ◽  
Better Than

ABSTRACTSiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

2018 ◽  
Vol 53 (5) ◽  
pp. 1700246 ◽  
Author(s):  
Xue-Feng Han ◽  
Xin Liu ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Heat Transfer Model ◽  
Silicon Single Crystal ◽  
Transfer Model ◽  
Floating Zone
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