Hydrogen fluoride vapor etching for Pre-Epi silicon surface preparation

1992 ◽  
Vol 21 (1) ◽  
pp. 57-60 ◽  
Author(s):  
Robert McIntosh ◽  
Tung-Sheng Kuan ◽  
Edouard Defresart
Keyword(s):  
Hydrogen Fluoride ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Hydrogen Fluoride Vapor

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

2009 ◽  
Vol 145-146 ◽  
pp. 181-184 ◽  
Author(s):  
Andrea E. Pap ◽  
Zsolt Nényei ◽  
Gábor Battistig ◽  
István Bársony
Keyword(s):  
Silicon Surface ◽  
Surface States ◽  
Surface Preparation ◽  
Hydrogen Desorption ◽  
Dangling Bonds ◽  
Hydrogen Atoms ◽  
Surface Band ◽  
Band Bending ◽  
Chemical Treatments ◽  
Wet Chemical

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

Impact of Megasonic Activation with Different Chemistries on Silicon Surface in Single Wafer Tool

2009 ◽  
Vol 145-146 ◽  
pp. 15-18
Author(s):  
Guillaume Briend ◽  
Pascal Besson ◽  
Thierry Salvetat ◽  
Sébastien Petitdidier
Keyword(s):  
Contact Angle ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Process Time ◽  
Particle Removal ◽  
Preparation Process ◽  
Defect Inspection ◽  
Process Sequence ◽  
Angle Measurements ◽  
Contact Angle Measurements

More and more, 300mm manufacturing promotes a single wafer tool approach in FEOL cleaning. Previously, we reported an advanced surface preparation process based on dilute HF/HCl/DIW and O3/HCl/DIW chemistries coupled with megasonic activation during the ozone step only, on a 300mm single-wafer platform [1]. As throughput consideration implies shorter process time, the activation of megasons during the whole cleaning step could be of interest for very small particle removal efficiency. Nevertheless, extending megasonic activation to the entire process sequence leads to degraded results on silicon surface. Indeed, damages are created at 90 and 65nm defect inspection levels when megasonic activation is used in the presence of both HF species and on hydrophobic silicon surface. In this paper, we demonstrate that the megasonic activation (Megs) generates randomly and locally oxidized species which may be the main cause of damages in the presence of HF chemistry. Additional characterizations are performed to understand this problem (haze inspections, ATR analysis and contact angle measurements).

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

Surface Preparation Quality before Epitaxy our Paper's

2016 ◽  
Vol 255 ◽  
pp. 13-17 ◽  
Author(s):  
Philippe Garnier
Keyword(s):  
Design Of Experiments ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Surface Stability ◽  
Wafer Cleaning

“HF Last” process are widely used as pre epi cleans. They enable a Si-H surface to grow a perfect Si layer by epitaxy. Nonetheless, such hydrophobic wafers are extremely sensitive to watermarks formation during the wafer drying. A design of experiments has been used to determine which parameters impact their formation on a single wafer cleaning tool. Plus, the silicon surface stability has been compared between this tool and an immersion batch cleaning tool.

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