A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation

1991 ◽  
Vol 20 (5) ◽  
pp. 345-352 ◽  
Author(s):  
J. M. Tartaglia ◽  
S. M. Crochiere ◽  
C. E. Kalnas ◽  
D. L. Farrington ◽  
J. A. Kronwasser ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Etch Pit Density ◽  
X Ray ◽  
Etch Pit

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

2007 ◽  
Vol 556-557 ◽  
pp. 213-218 ◽  
Author(s):  
K.W. Kirchner ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
Michael Dudley ◽  
Adrian R. Powell
Keyword(s):  
Laser Light ◽  
Peak Position ◽  
Etch Pit Density ◽  
Normal Position ◽  
Rocking Curve ◽  
X Ray ◽  
Etch Pit ◽  
Density Map ◽  
Beam Transmission ◽  
Si Wafer

Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 23 6) reflection for the wafer in the normal position. These measurements were corrected for the ‘wobble’ in the instrument by scanning a 4” (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.

X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
J.F. Chen ◽  
C. R. Wie ◽  
F. A. Junga
Keyword(s):  
Phase Diagram ◽  
Sharp Increase ◽  
Emission Spectra ◽  
Etch Pit Density ◽  
Double Crystal ◽  
X Ray ◽  
Etch Pit ◽  
In Doping ◽  
Good Crystalline Quality ◽  
Pseudobinary Phase Diagram

ABSTRACTThe effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculated from the pseudobinary phase diagram of the ternary system at a dilute In concentration. The full widths at halfmaximum (FWHM) of x-ray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 × 1019 cm−3, beyond which a sharp increase in the FWHM is observed. Etch pit density (EPD) measurement shows that the dislocation density is reduced by doping the epi-layer with In. At the optimal In concentration of 2.4 × 1019 cm−3, the EPD is reduced by a factor of 20 when measured at the surface of a 9 um thick epilayer.Photoluminesce measurements made at 15 K show two sharp emission spectra near the bandedge. The relative intensities of the two emissions, I(l.49eV)/I(l.5eV) are reduced with increasing In content. This suggests that incorporation of Carbon acceptors is suppressed by In doping in the GaAs epilayers. The FWHM as small as 5 meV of the bandedge transition was obtained for the epi-layer doped with In concentration of 2.4 × 1019 cm−3.

Growth of Boron Carbide Crystals from a Copper Flux

2009 ◽  
Vol 1164 ◽  
Author(s):  
Yi Zhang ◽  
James Edgar ◽  
Jack Plummer ◽  
Clinton Whiteley ◽  
Hui Chen ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Potassium Hydroxide ◽  
Crystal Size ◽  
Optical Microscope ◽  
Etch Pit Density ◽  
Bulk Crystals ◽  
Limited Growth ◽  
Etch Pits ◽  
X Ray ◽  
Etch Pit

AbstractBoron carbide crystals ranging in size from 50 microns to several millimeters have been grown from a copper-boron carbide flux at temperatures from 1500°C to 1750°C. The crystal size increased with growth temperature although copper evaporation limited growth at the higher temperatures. Synchrotron X-ray Laue patterns were indexed according to (001) orientation boron carbide structure, indicating the bulk crystals were single crystalline with {001} growth facets. Raman spectrum of boron carbide indicates an improved crystal quality compared to the source powder, but peaks of crystals grown from 11B -enriched source shifted to the lower energy by 1-4 cm−1 from literature values, possibly due to the boron isotope dependency. Five fold symmetry defects and twin planes were common as observed by optical microscope and scanning electron microscope. Raindrop shape etch pits were formed after defect selective etching in molten potassium hydroxide at 600°C for 6 minutes. Typically, the etch pit density was on the order of 106/cm2.

Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis

1992 ◽  
Vol 262 ◽  
Author(s):  
Don Di Marzio ◽  
Louis G. Casagrande ◽  
Myung B. Lee ◽  
Thomas Fanning ◽  
Michael Dudley
Keyword(s):  
Semiconductor Industry ◽  
Defect Analysis ◽  
Etch Pit Density ◽  
Ir Detector ◽  
Rocking Curve ◽  
X Ray ◽  
Etch Pit ◽  
White Beam ◽  
Device Structures ◽  
Nondestructive Characterization

ABSTRACTNondestructive characterization techniques for substrates, epilayers, and device structures are becoming increasingly important in the semiconductor industry. Synchrotron-based white-beam x-ray topography, x-ray rocking curve measurements, and etch pit density were used to map the defect structure in a variety of CdTe and CdZnTe single crystal substrates, which are important for IR detector applications involving HgCdTe. Defects such as low angle grain boundaries have been successfully correlated using topography, rocking curves, and etch pit density, and twins have been observed using topography and rocking curves. The effectiveness of white-beam synchrotron topography for rapid and nondestructive defect analysis and substrate screening is discussed.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
C.S. Kim ◽  
S.K. Noh ◽  
H.J. Lee ◽  
Y.K. Cho ◽  
Y.I. Kim ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Rotation Angle ◽  
Lattice Relaxation ◽  
High Dislocation Density ◽  
Sinusoidal Oscillation ◽  
Double Crystal ◽  
X Ray ◽  
Anisotropic Lattice

ABSTRACTWe have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections were measured as a function of the azimuthal rotation angle of the sample. We observed the sinusoidal oscillation of the FWHM of the epilayer peak for (004) reflections due to the asymmetric dislocation density along two orthogonal <110> directions, and the direction of the maximum FWHM corresponding to high dislocation density is along [110]. In addition, the strain along [110] is smaller than that along [1-10], indicating that the layer suffered anisotropic lattice relaxation. The direction of larger relaxation([l-10]) is not consistent with that of high dislocation density([110]). The results suggest that the asymmetry in dislocation density is not responsible for the anisotropic relaxation of the ZnSe epilayer.

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

scholarly journals A Technique for Producing Strain-Free Flat Surfaces on Single Crystals of Ice

1970 ◽  
Vol 9 (57) ◽  
pp. 385-390 ◽  
Author(s):  
T. M Tobin ◽  
K. Itagaki
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Aluminum Surface ◽  
Ice Crystal ◽  
X Ray ◽  
Flat Surfaces ◽  
Etch Pit

The top surface of an accurately aligned ice crystal is melted by an aluminum surface and then frozen to a warm “Lucite” plate ant! tapped free. Etch-pit development shows that the dislocation density on the resulting surface is similar to die bulk dislocation density determined by X-ray topographic methods.

Creep of CdZnTe at high homologous temperatures

1999 ◽  
Vol 14 (10) ◽  
pp. 3864-3869 ◽  
Author(s):  
T. E. Stevens ◽  
J. C. Moosbrugger ◽  
F. M. Carlson
Keyword(s):  
Elevated Temperatures ◽  
Small Strain ◽  
Small Sample ◽  
Dislocation Creep ◽  
Etch Pit Density ◽  
Self Diffusion ◽  
Etch Pit ◽  
Before And After ◽  
Low Levels ◽  
Different Sources

The creep behavior of single-crystal Zn-doped CdTe was examined in the small strain regime. Specimens from two different sources, with tensile axes [110] and [112], were deformed at 1073 and 1173 K. Strain rates were of order 10−6 to 10−7 s−1. A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sublimation of test specimens at elevated temperatures. Some tests showed a transition from secondary to tertiary creep at low levels of strain. An activation energy for steady-state creep was calculated as QC = 1.46 eV, and the creep exponent was found to be approximately n = 4.2. These results, coupled with reported activation energies for self-diffusion of Cd in Cd(Zn)Te, indicate a dislocation creep mechanism. Etch pit density was measured before and after deformation and approached a common level regardless of initial etch pit density.

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