Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

1996 ◽  
Vol 25 (3) ◽  
pp. 467-477 ◽  
Author(s):  
S. Sethi ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Erbium Doped ◽  
Device Applications

Molecular‐beam epitaxy of (100) InSb for CdTe/InSb device applications

1988 ◽  
Vol 63 (5) ◽  
pp. 1526-1532 ◽  
Author(s):  
G. M. Williams ◽  
C. R. Whitehouse ◽  
T. Martin ◽  
N. G. Chew ◽  
A. G. Cullis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Device Applications

Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 16 (11) ◽  
pp. 3266-3273 ◽  
Author(s):  
C. H. Lin ◽  
R. J. Hwu ◽  
L. P. Sadwick
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Gaas Layer ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Crystal Properties ◽  
Device Applications ◽  
Composition Profiles

Single-crystal thulium phosphide (TmP) was grown heteroepitaxially on (001) GaAs substrates by molecular beam epitaxy with the orientation relationship [100]TmP//[100]GaAs and {001}TmP//{001}GaAs. The crystal properties and the defects in TmP/GaAs, GaAs/TmP/GaAs heterostructure were characterized through x-ray diffraction, atomic force microscopy, and transmission electron microscopy. TmP was found to have a huge difference in thermal expansion coefficient compared GaAs, which produced high tensile residual stress and may result in the formation of defects. The major defects in the top GaAs layer are stacking faults or microtwins, and they directly correlated with the islandlike surface morphology of the GaAs overlayer. The composition profiles of the TmP/GaAs heterostructure were measured by secondary ion mass spectrometry. The reason for surface segregation of Tm and Ga atoms is discussed and is primarily due to their higher diffusion coefficient near the surface as compared to that in the TmP epilayer bulk. The thermally stable characters of the TmP/GaAs heterostructures allow them to be promising candidates in various device applications.

scholarly journals Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

2019 ◽  
Vol 217 (3) ◽  
pp. 1900675 ◽  
Author(s):  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
Matthew T. Hardy ◽  
Brian P. Downey ◽  
David F. Storm ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Molecular Beam ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Superconducting Device ◽  
Device Applications

Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications

2021 ◽  
pp. 153-189
Author(s):  
Yuanpeng Wu ◽  
Ping Wang ◽  
Emmanouil Kioupakis ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Device Applications

scholarly journals Materials Issues in Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
J.Y. Tsao
Keyword(s):  
Thin Films ◽  
State Physics ◽  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid State Physics ◽  
The Past ◽  
Device Structures ◽  
Device Applications ◽  
Interesting Area

The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics.In addition toits numerous device applications, MBE is also an enormously rich and interesting area ofmaterials science in and of itself. In this paper, we discuss a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, orsurfaces [1].

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