Effect of ion dose rate on rapid laser annealing of implanted GaAs

1996 ◽  
Vol 25 (1) ◽  
pp. 3-5 ◽  
Author(s):  
K. Masuda ◽  
K. Murakami ◽  
H. Y. Nan
Keyword(s):  
Dose Rate ◽  
Laser Annealing ◽  
Rapid Laser Annealing

Pulsed Laser Annealing Effects in High Dose Rate Silicon Implants

1980 ◽  
Vol 1 ◽  
Author(s):  
J.S. Williams ◽  
A. P. Pogany ◽  
D. G. Beanland ◽  
D. J. Chivers ◽  
M. J. Kenny ◽  
...  
Keyword(s):  
Dose Rate ◽  
Laser Power ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
High Dose Rate ◽  
Threshold Power ◽  
High Dose ◽  
Electrical Measurements ◽  
Pulsed Laser Annealing ◽  
Annealing Effects

ABSTRACTHigh resolution Rutherford backscattering and channelling TEM and electrical measurements have been employed to investigate pulsed-ruby laser annealing effects in high dose rate ion implanted silicon wafers. The laterally non-uniform, part amorphous, part crystalline disordered structure which can result from high dose rate implants has been utilized to investigate the selective removal of amorphous or crystalline damage at near-threshold laser powers. Evidence is found for preferrential recrystallisation of amorphous damage regions over a broad laser power window which is below the threshold power required to melt adjacent crystalline silicon. At laser power levels above the crystalline-to-melt threshold, excellent uniformity in damage removal and electrical properties were obtained over the entire wafer.

Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing

Preparation of Ba2YCu3OxSuperconducting Films by Laser Evaporation and Rapid Laser Annealing

1988 ◽  
Vol 27 (Part 2, No. 4) ◽  
pp. L619-L621 ◽  
Author(s):  
Toshiharu Minamikawa ◽  
Yasuto Yonezawa ◽  
Shigeru Otsubo ◽  
Toshihiro Maeda ◽  
Akihiro Moto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Laser Evaporation ◽  
Rapid Laser Annealing

scholarly journals Laser annealing of electrodeposited CuInSe2semiconductor precursors: experiment and modeling

2017 ◽  
Vol 5 (6) ◽  
pp. 1336-1345 ◽  
Author(s):  
H. J. Meadows ◽  
S. Misra ◽  
B. J. Simonds ◽  
M. Kurihara ◽  
T. Schuler ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Microstructural Properties ◽  
Rapid Laser Annealing

Rapid laser annealing converts CuInSe2precursors into working semiconductors only when the precursor has suitable optical and microstructural properties.

THE EFFECT OF LOCAL LASER ANNEALING ON THE MAGNETIC PROPERTIES OF AMORPHOUS RIBBONS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1325-C8-1326
Author(s):  
P. Sánchez ◽  
M. C. Sánchez ◽  
E. López ◽  
M. García ◽  
C. Aroca
Keyword(s):  
Magnetic Properties ◽  
Laser Annealing ◽  
Amorphous Ribbons
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