Defect reduction in Hg1−xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

2001 ◽  
Vol 30 (6) ◽  
pp. 794-796 ◽  
Author(s):  
F. Aqariden ◽  
H. D. Shih ◽  
A. M. Turner ◽  
P. K. Liao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction

Microstructural defect reduction in HgCdTe grown by photoassisted molecular‐beam epitaxy

1990 ◽  
Vol 8 (2) ◽  
pp. 1013-1019 ◽  
Author(s):  
K. A. Harris ◽  
T. H. Myers ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
R. W. Green ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Microstructural Defect

scholarly journals Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

2002 ◽  
Vol 80 (2) ◽  
pp. 216-218 ◽  
Author(s):  
D. Huang ◽  
M. A. Reshchikov ◽  
F. Yun ◽  
T. King ◽  
A. A. Baski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Sapphire Substrates

scholarly journals Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

1996 ◽  
Vol 69 (1) ◽  
pp. 82-84 ◽  
Author(s):  
Zhonghai Yu ◽  
S. L. Buczkowski ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Gaas Substrates

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

2008 ◽  
Vol 92 (12) ◽  
pp. 121902 ◽  
Author(s):  
D. Cherns ◽  
L. Meshi ◽  
I. Griffiths ◽  
S. Khongphetsak ◽  
S. V. Novikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Intermediate Layers

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

1986 ◽  
Vol 49 (15) ◽  
pp. 942-944 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
N. A. El‐Masry ◽  
Y. Lo ◽  
N. Hamaguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Superlattice Structures

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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