Hydrogenated amorphous semiconductors

1993 ◽  
Vol 22 (1) ◽  
pp. 39-48 ◽  
Author(s):  
W. Paul ◽  
R. A. Street ◽  
S. Wagner
Keyword(s):  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

A Quantitative Model for the Metastable Defect Creation in Amorphous Semiconductors by Kev-Electron Irradiation

1994 ◽  
Vol 336 ◽  
Author(s):  
A. Scholz ◽  
B. Schröder ◽  
H. Oechsner
Keyword(s):  
Energy Dissipation ◽  
Electron Irradiation ◽  
Quantitative Agreement ◽  
Quantitative Model ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Experimental Results ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTThe interaction mechanisms of keV-electrons with the hydrogenated Amorphous semiconductor are briefly discussed and the differences to the metastable defect creation by photons are set out. Based on the knowlegde of the energy dissipation mechanisms of keV-electrons in the hydrogenated Amorphous semiconductor, a model for the creation of metastable defects by keV-electron irradiation is developed and its quantitative agreement with the experimental results is shown.

Stress originating from nanovoids in hydrogenated amorphous semiconductors

2017 ◽  
Vol 121 (9) ◽  
pp. 095307 ◽  
Author(s):  
Zumin Wang ◽  
David Flötotto ◽  
Eric J. Mittemeijer
Keyword(s):  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H

1990 ◽  
Vol 209 ◽  
Author(s):  
Shu Jin ◽  
Lothar Ley
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Study ◽  
Density Gradient ◽  
Growth Condition ◽  
Photoelectron Spectroscopy ◽  
Defect Density ◽  
Total Yield ◽  
Structure Change ◽  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

ABSTRACTTotal yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.

scholarly journals Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

2002 ◽  
Vol 17 (5) ◽  
pp. 977-980 ◽  
Author(s):  
Wei-Fang Su ◽  
Hong-Ru Guo
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Quenching ◽  
Amorphous Semiconductors ◽  
Electronic Density ◽  
Quenching Effect ◽  
Oxide Powders ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

Photoconductivity Decay in Amorphous Semiconductors

1987 ◽  
Vol 95 ◽  
Author(s):  
William Pickin ◽  
Doroteo Mendoza ◽  
Juan Carlos Alonso
Keyword(s):  
Steady State ◽  
Decay Time ◽  
Minority Carrier ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Decay Process ◽  
Intensity Dependence ◽  
Multiple Trapping ◽  
Photoconductivity Decay ◽  
Hydrogenated Amorphous

AbstractBased on modifications of the standard multiple trapping approach we present a theory of photoconductivity decay from the steady state in which explicit account is taken of the minority carrier behaviour. We use this to develop a physical understanding of the decay process. We obtain the intensity dependence of the decay time and compare it with experimental results for hydrogenated amorphous silicon.

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