Theory and applications of ignition with variable activation energy

1992 ◽  
Vol 1 (3) ◽  
pp. 208-212
Author(s):  
G. C. Wake ◽  
M. Sleeman ◽  
X. D. Chen ◽  
J. C. Jones
Keyword(s):  
Activation Energy ◽  
Variable Activation Energy

Internal Schottky barriers in semiconductors

1982 ◽  
Vol 60 (3) ◽  
pp. 269-272 ◽  
Author(s):  
F. L. Weichman
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Cuprous Oxide ◽  
Schottky Barriers ◽  
Conduction Process ◽  
Variable Activation Energy ◽  
Semiconductor Contact

We discuss the effect on the electrical conductivity of a semiconductor if small metal inclusions are formed within the bulk of the semiconductor where the metal to semiconductor contact is a rectifying one. We find that the depletion layers formed inside the material can dominate the conduction process and give rise to conditions similar to that of a highly compensated semiconductor with highly variable activation energy. Some of the predictions of the model are compared to observed facts in cuprous oxide and are shown to be consistent with observation. The expected behaviour of a semiconductor with internal injecting contacts is also briefly discussed.

Modgil-Virk Formulation of Single Activation Energy Model of Radiation Damage Annealing in SSNTDs: A Critical Appraisal

2015 ◽  
Vol 239 ◽  
pp. 215-242 ◽  
Author(s):  
Hardev Singh Virk
Keyword(s):  
Activation Energy ◽  
Radiation Damage ◽  
Critical Appraisal ◽  
Ion Beam ◽  
Heavy Ion ◽  
Optical Microscope ◽  
Energy Model ◽  
Thermal Heating ◽  
Different Types ◽  
Variable Activation Energy

Passage of heavy ions produces radiation-damage trails known as latent tracks in a variety of solid-state nuclear-track detectors (SSNTDs). These tracks are made visible in an optical microscope by a simple process known as chemical etching. It is a well-known fact that latent tracks are radiation damage trails in SSNTDs, which can be annealed by thermal heating. Modgil-Virk formulation of single-activation-energy model of radiation damage annealing was proposed as an empirical approach for explaining the thermal fading of nuclear tracks in SSNTDs. The empirical formulation of this model is based on track annealing data collected from both isothermal and isochronal experiments performed on different types of SSNTDs using a variety of heavy ion beams and fission fragments. The main objective of this empirical model was to resolve some contradictions of variable activation energy derived by using Arrhenius plots to study annealing in mineral SSNTDs. Some equivalent versions of the Modgil-Virk model have been proposed but the concept of single activation energy is vindicated in all empirical formulations. The model always yields a unique value of activation energy independent of the nature of the ion beam used and the degree of annealing. The anisotropy of the mineral SSNTDs is revealed by variation in activation energy along different crystal planes and even with different orientations of the ion beam on the same plane. Some recent experiments are a pointer to the successful exploitation of this model for future cosmic-rays studies using SSNTDs.

Oil shale pyrolysis kinetics and variable activation energy principle

2010 ◽  
Vol 87 (4) ◽  
pp. 1269-1272 ◽  
Author(s):  
Omar S. Al-Ayed ◽  
M. Matouq ◽  
Z. Anbar ◽  
Adnan M. Khaleel ◽  
Eyad Abu-Nameh
Keyword(s):  
Activation Energy ◽  
Oil Shale ◽  
Pyrolysis Kinetics ◽  
Energy Principle ◽  
Oil Shale Pyrolysis ◽  
Variable Activation Energy

A time to search: finding the meaning of variable activation energy

2016 ◽  
Vol 18 (28) ◽  
pp. 18643-18656 ◽  
Author(s):  
Sergey Vyazovkin
Keyword(s):  
Activation Energy ◽  
Kinetic Parameters ◽  
Variable Activation Energy

This review discusses an approach to linking the variable activation energy of a process to the kinetic parameters of its individual steps.

Development of a Variable Activation Energy Model for Biomass Devolatilization

2009 ◽  
Vol 23 (6) ◽  
pp. 3300-3306 ◽  
Author(s):  
Enrico Biagini ◽  
Ludovica Guerrini ◽  
Cristiano Nicolella
Keyword(s):  
Activation Energy ◽  
Energy Model ◽  
Variable Activation Energy

A deep semiconductor defect with continuously variable activation energy and capture cross section

1999 ◽  
Vol 75 (2) ◽  
pp. 277-279 ◽  
Author(s):  
M. A. Lourenço ◽  
Wai Lek Ng ◽  
K. P. Homewood ◽  
K. Durose
Keyword(s):  
Activation Energy ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Variable Activation Energy
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