Improvement in dielectric properties of low temperature PECVD silicon dioxide by reaction with hydrazine

1995 ◽  
Vol 24 (6) ◽  
pp. 751-755 ◽  
Author(s):  
K. W. Vogt ◽  
M. Houston ◽  
M. F. Ceiler ◽  
C. E. Roberts ◽  
P. A. Kohl
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Silicon Dioxide

ChemInform Abstract: Low-Temperature Sintering and Microwave Dielectric Properties of Li3MO4(M: Ta, Sb) Ceramics.

ChemInform ◽  
2012 ◽  
Vol 43 (26) ◽  
pp. no-no
Author(s):  
Li-Xia Pang ◽  
Huan Liu ◽  
Di Zhou ◽  
Jia-Xing Yang ◽  
Dang-Juan Li ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Microwave Dielectric Properties ◽  
Low Temperature Sintering ◽  
Microwave Dielectric

LOW-TEMPERATURE ION-PLASMA DEPOSITION TECHNOLOGY OF NANOSTRUCTURED FILMS OF ALUMINUM AND BORON NITRIDES

2021 ◽  
Vol 56 ◽  
pp. 97-107
Author(s):  
M. S. Zayats ◽  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Plasma Deposition ◽  
Heating Temperature ◽  
Substrate Heating ◽  
Ion Plasma ◽  
Technological Cycle ◽  
Physical And Chemical

A low-temperature (substrate heating temperature up to 400 °C) ion-plasma technology for the formation of nanostructured AlN and BN films by the method of high-frequency reactive magnetron sputtering of the corresponding targets has been developed (the modernized installation "Cathode-1M"), which has in its technological cycle the means of physical and chemical modification, which allow to purposefully control the phase composition, surface morphology, size and texture of nanocrystalline films. The possibility of using the method of high-frequency magnetron sputtering for deposition of transparent hexagonal BN films in the nanoscale state on quartz and silicon substrates is shown. Atomic force microscopy (AFM) has shown that AlN films can have an amorphous or polycrystalline surface with grain sizes of approximately 20-100 nm, with the height of the nanoparticles varying from 3 to 10 nm and the degree of surface roughness from 1 to 10 nm. It was found that the dielectric penetration of polycrystalline AlN films decreases from 10 to 3.5 at increased frequencies from 25 Hz to 1 MHz, and the peak tangent of the dielectric loss angle reaches 0.2 at 10 kHz. Such features indicate the existence of spontaneous polarization of dipoles in the obtained AlN films. Interest in dielectric properties in AlN / Si structures it is also due to the fact that there are point defects, such as nitrogen vacancies and silicon atoms, which diffuse from the silicon substrate during synthesis and play an important role in the dielectric properties of AlN during the formation of dipoles. The technology makes it possible, in a single technological cycle, to produce multilayer structures modified for specific functional tasks with specified characteristics necessary for the manufacture of modern electronics, optoelectronics and sensorics devices. It should also be noted that the technology of magnetron sputtering (installation "Cathode-1M") is highly productive, energetically efficient and environmentally friendly in comparison with other known technologies for creating semiconductor structures and allows them to be obtained with minimal changes in the technological cycle.

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