Annealing behavior of undoped bulk GaAs

1989 ◽  
Vol 18 (2) ◽  
pp. 123-129 ◽  
Author(s):  
Z. Q. Fang ◽  
L. Shan ◽  
J. H. Zhao ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Bulk Gaas ◽  
Annealing Behavior

Two-stage self-seeding method for preparation of single crystals of poly(phenylene sulfide)

1989 ◽  
Vol 47 ◽  
pp. 368-369
Author(s):  
Sengshiu Chung ◽  
Peggy Cebe
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Dilute Solution ◽  
Two Stage ◽  
Annealing Behavior ◽  
High Performance Polymers ◽  
Seeding Method ◽  
Phenylene Sulfide

We are studying the crystallization and annealing behavior of high performance polymers, like poly(p-pheny1ene sulfide) PPS, and poly-(etheretherketone), PEEK. Our purpose is to determine whether PPS, which is similar in many ways to PEEK, undergoes reorganization during annealing. In an effort to address the issue of reorganization, we are studying solution grown single crystals of PPS as model materials.Observation of solution grown PPS crystals has been reported. Even from dilute solution, embrionic spherulites and aggregates were formed. We observe that these morphologies result when solutions containing uncrystallized polymer are cooled. To obtain samples of uniform single crystals, we have used two-stage self seeding and solution replacement techniques.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

2019 ◽  
Vol 19 (7) ◽  
pp. 3777-3784
Author(s):  
Jakub Rozbořil ◽  
Katharina Broch ◽  
Roland Resel ◽  
Ondřej Caha ◽  
Filip Münz ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Molecule ◽  
Organic Semiconductor ◽  
Annealing Behavior ◽  
Semiconductor Thin Films

Spatially resolved photocarrier energy relaxation in low-doped bulk GaAs

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
T. Kiessling ◽  
J.-H. Quast ◽  
A. Kreisel ◽  
T. Henn ◽  
W. Ossau ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Bulk Gaas ◽  
Spatially Resolved

Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

2004 ◽  
Vol 51 (6) ◽  
pp. 3172-3177 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
J.A. Felix ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Annealing Behavior ◽  
Low Dose Rate ◽  
Bipolar Devices

Assignments of transitions in optically-pumped NMR of GaAs/AlGaAs quantum wells on a bulk GaAs substrate

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
E. L. Sesti ◽  
D. D. Wheeler ◽  
S. E. Hayes ◽  
D. Saha ◽  
G. D. Sanders ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Gaas Substrate ◽  
Optically Pumped ◽  
Bulk Gaas ◽  
Optically Pumped Nmr

Coherent control of an optically injected ballistic spin-polarized current in bulk GaAs

2002 ◽  
Vol 91 (7) ◽  
pp. 4382-4386 ◽  
Author(s):  
Martin J. Stevens ◽  
Arthur L. Smirl ◽  
R. D. R. Bhat ◽  
J. E. Sipe ◽  
H. M. van Driel
Keyword(s):  
Coherent Control ◽  
Bulk Gaas ◽  
Spin Polarized ◽  
Ballistic Spin

Bulk GaAs as a solar neutrino detector

2001 ◽  
Vol 466 (1) ◽  
pp. 119-125 ◽  
Author(s):  
V.N. Gavrin ◽  
Y.P. Kozlova ◽  
E.P. Veretenkin ◽  
T.J. Bowles ◽  
V.K. Eremin ◽  
...  
Keyword(s):  
Solar Neutrino ◽  
Neutrino Detector ◽  
Bulk Gaas
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