Assignments of transitions in optically-pumped NMR of GaAs/AlGaAs quantum wells on a bulk GaAs substrate

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
E. L. Sesti ◽  
D. D. Wheeler ◽  
S. E. Hayes ◽  
D. Saha ◽  
G. D. Sanders ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Gaas Substrate ◽  
Optically Pumped ◽  
Bulk Gaas ◽  
Optically Pumped Nmr

Experimental measurements of optically-pumped NMR (OPNMR) and spin polarization in bulk GaAs and GaAs/AlGaAs quantum wells

2014 ◽  
Author(s):  
Dustin D. Wheeler ◽  
Erika L. Sesti ◽  
Dipta Saha ◽  
Gary D. Sanders ◽  
Christopher J. Stanton ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Experimental Measurements ◽  
Optically Pumped ◽  
Bulk Gaas ◽  
Optically Pumped Nmr

Strain in GaAs quantum wells and layered composites detected by optically pumped NMR (Conference Presentation)

2016 ◽  
Author(s):  
Clifford R. Bowers ◽  
John T. Tokarski ◽  
Lauren A. McCarthy ◽  
Ryan M. Wood ◽  
Christopher J. Stanton
Keyword(s):  
Quantum Wells ◽  
Layered Composites ◽  
Optically Pumped ◽  
Optically Pumped Nmr

Modeling optically pumped NMR and spin polarization in GaAs/AlGaAs quantum wells

2014 ◽  
Author(s):  
D. Saha ◽  
R. Wood ◽  
J. T. Tokarski ◽  
L. A. McCarthy ◽  
C. R. Bowers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Optically Pumped ◽  
Optically Pumped Nmr

Evidence for the light hole in GaAs/AlGaAs quantum wells from optically-pumped NMR and Hanle curve measurements

2014 ◽  
Vol 246 ◽  
pp. 130-135 ◽  
Author(s):  
Erika L. Sesti ◽  
Wieland A. Worthoff ◽  
Dustin D. Wheeler ◽  
Dieter Suter ◽  
Sophia E. Hayes
Keyword(s):  
Quantum Wells ◽  
Light Hole ◽  
Optically Pumped ◽  
Optically Pumped Nmr

scholarly journals Probing the magnetic field dependence of the light hole transition in GaAs/AlGaAs quantum wells using optically pumped NMR

2018 ◽  
Vol 97 (7) ◽  
Author(s):  
Matthew M. Willmering ◽  
Erika L. Sesti ◽  
Sophia E. Hayes ◽  
Ryan M. Wood ◽  
Clifford R. Bowers ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Light Hole ◽  
Optically Pumped ◽  
Optically Pumped Nmr ◽  
The Magnetic Field ◽  
Hole Transition

Optically Pumped NMR Evidence for Finite-Size Skyrmions in GaAs Quantum Wells near Landau Level Fillingν=1

1995 ◽  
Vol 74 (25) ◽  
pp. 5112-5115 ◽  
Author(s):  
S. E. Barrett ◽  
G. Dabbagh ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
R. Tycko
Keyword(s):  
Quantum Wells ◽  
Landau Level ◽  
Finite Size ◽  
Optically Pumped ◽  
Optically Pumped Nmr

Electronic states in gallium arsenide quantum wells probed by optically pumped NMR

Science ◽  
1995 ◽  
Vol 268 (5216) ◽  
pp. 1460-1463 ◽  
Author(s):  
R Tycko ◽  
S. Barrett ◽  
G Dabbagh ◽  
L. Pfeiffer ◽  
K. West
Keyword(s):  
Gallium Arsenide ◽  
Quantum Wells ◽  
Electronic States ◽  
Optically Pumped ◽  
Optically Pumped Nmr

scholarly journals Elastic Energy in Inas Quantum Dot-in-a-Well Structures

2014 ◽  
Vol 2 ◽  
pp. 30-34
Author(s):  
Erick Velázquez-Lozada ◽  
G.M. Camacho-González ◽  
J. Quino-Cerdan
Keyword(s):  
Quantum Wells ◽  
Elastic Strain ◽  
Gaas Substrate ◽  
Buffer Layers ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Bulk Gaas ◽  
X Ray ◽  
Fitting Procedure ◽  
Diffraction Peaks

The photoluminescence (PL), its temperature dependence and X ray diffraction (XRD) have been studied in the symmetric In0.15Ga1-0.15As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), obtained with the variation of QD growth temperatures (470-535°C). The increase of QD growth temperatures is accompanied by the enlargement of QD lateral sizes (from 12 up to 28 nm) and by the shift non monotonically of PL peak positions. The fitting procedure has been applied on the base of Varshni analysis to the temperature dependences of PL peaks. The obtained Varshni parameters testify that in studied QD structures the process of In/Ga interdiffusion between QDs and capping/buffer layers takes place partially. However, this process cannot explain the difference in PL peak positions. The XRD study has revealed the high intensity peaks at 2Θ= 31.6-31.8o (Kα1, Kα2) that correspond to the X ray diffraction of the Kα1 and Kα2 lines of Cu source from the (200) crystal planes of cubic GaAs. It was shown that the XRD peak is the superposition of the diffraction from the GaAs substrate and GaAs layers of quantum wells. The position of diffraction peaks related to the cubic GaAs substrate coincides with the very well know XRD data for the bulk GaAs. It means that the elastic strain in the GaAs substrate has been relaxed. At the same time the peak positions of the (200) diffraction peaks in GaAs epitaxial layers shift to the high angles in comparison with the bulk GaAs, testifying the compression strain in GaAs epitaxial layers. The minimum of elastic strain is detected in the structure with QD grown at 510°C that manifests itself by the higher QD PL intensity and lower the PL peak energy.

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold
Sign in / Sign up

Export Citation Format

Share Document