The effect of cathode materials on reactive ion etching of silicon and silicon dioxide in a CF4 plasma

1978 ◽  
Vol 7 (3) ◽  
pp. 415-428 ◽  
Author(s):  
L. M. Ephrath
Keyword(s):  
Silicon Dioxide ◽  
Cathode Materials ◽  
Reactive Ion Etching ◽  
Ion Etching

Reactive Ion Etching Of Silicon Dioxide

1987 ◽  
Author(s):  
Peter C. Sukanek ◽  
Glynis Sullivan
Keyword(s):  
Silicon Dioxide ◽  
Reactive Ion Etching ◽  
Ion Etching

Removal of surface contamination after reactive ion etching of silicon dioxide

Vacuum ◽  
1994 ◽  
Vol 45 (5) ◽  
pp. 519-524 ◽  
Author(s):  
R Jackson ◽  
AJ Pidduck ◽  
MA Green
Keyword(s):  
Silicon Dioxide ◽  
Reactive Ion Etching ◽  
Surface Contamination ◽  
Ion Etching

Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects

1996 ◽  
Vol 427 ◽  
Author(s):  
R. Tacito ◽  
C. Steinbrüchel
Keyword(s):  
Dielectric Constant ◽  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Low Dielectric Constant ◽  
Ion Etching ◽  
Fine Line ◽  
Dual Damascene ◽  
Low Dielectric

AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

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