Numerical analysis of silicon-on-lnsulator short channel effects in a radiation environment

1992 ◽  
Vol 21 (7) ◽  
pp. 683-687 ◽  
Author(s):  
J. H. Smith ◽  
R. Lawrence ◽  
G. J. Campisi
Keyword(s):  
Numerical Analysis ◽  
Radiation Environment ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

2019 ◽  
Vol 9 (15) ◽  
pp. 3163
Author(s):  
Hyeonjae Won ◽  
Ilsik Ham ◽  
Youngseok Jeong ◽  
Myounggon Kang
Keyword(s):  
Threshold Voltage ◽  
Radiation Effects ◽  
Radiation Environment ◽  
Short Channel Effects ◽  
Total Ionizing Dose ◽  
Short Channel ◽  
Device Scaling ◽  
Trap Parameter ◽  
Channel Effects

Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (VT). The channel insulator was composed of two materials, SiO2 and HfO2. To improve the accuracy of the simulation, the interfacial trap parameter of SiO2 and HfO2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less VT shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the VDD and channel doping.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

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