Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

1995 ◽  
Vol 24 (10) ◽  
pp. 1357-1361 ◽  
Author(s):  
D. Hahn ◽  
O. Jaschinski ◽  
H. -H. Wehmann ◽  
A. Schlachetzki ◽  
M. Von Ortenberg
Keyword(s):  
Concentration Dependence ◽  
Electron Concentration ◽  
Band Edge

Electron concentration dependence of Hall factor in In0.53Ga0.47As

1982 ◽  
Vol 40 (3) ◽  
pp. 251-253 ◽  
Author(s):  
Y. Takeda ◽  
M. A. Littlejohn
Keyword(s):  
Concentration Dependence ◽  
Electron Concentration ◽  
Hall Factor

scholarly journals Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

2004 ◽  
Vol 85 (5) ◽  
pp. 759-761 ◽  
Author(s):  
T. Makino ◽  
Y. Segawa ◽  
S. Yoshida ◽  
A. Tsukazaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Room Temperature ◽  
Band Edge ◽  
Near Band Edge ◽  
Gallium Concentration ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Electron Concentration Dependence of the Coulomb Gap in AlGaAs:Si

1998 ◽  
Vol 80 (8) ◽  
pp. 1706-1709 ◽  
Author(s):  
H. S. Moreira ◽  
J. F. Sampaio ◽  
E. S. Alves ◽  
A. G. de Oliveira
Keyword(s):  
Concentration Dependence ◽  
Electron Concentration ◽  
Coulomb Gap
Sign in / Sign up

Export Citation Format

Share Document