scholarly journals Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

2004 ◽  
Vol 85 (5) ◽  
pp. 759-761 ◽  
Author(s):  
T. Makino ◽  
Y. Segawa ◽  
S. Yoshida ◽  
A. Tsukazaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Room Temperature ◽  
Band Edge ◽  
Near Band Edge ◽  
Gallium Concentration ◽  
Edge Luminescence ◽  
Band Edge Luminescence

ChemInform Abstract: NEAR BAND-EDGE LUMINESCENCE IN ZINC SELENIDE GROWN FROM GALLIUM SOLUTION

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
B. J. FITZPATRICK ◽  
R. N. BHARGAVA ◽  
S. P. HERKO ◽  
P. M. HARNACK
Keyword(s):  
Zinc Selenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Luminescence in Si/Strained Si1−xGex Heterostructures

1995 ◽  
Vol 379 ◽  
Author(s):  
J.C. Sturm ◽  
A. St. Amour ◽  
Y. Lacroix ◽  
M.L.W. Thewalt
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Surface Passivation ◽  
Band Edge ◽  
Strained Si ◽  
Edge Luminescence ◽  
Recent Developments ◽  
High Pump ◽  
Band Edge Luminescence ◽  
First Time

ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room temperature). Strong evidence will be presented that the origin of the deep luminescence is radiation damage, and that generated defects are segregated or trapped in the SilxGex layers. The modelling of the temperature dependence by twocarrier numerical simulation is presented for the first time. The work and experimental data show convincingly that the strength of the luminescence at high temperature is controlled by recombination at the top silicon surface, which in turn can be controlled by surface passivation. At high pump powers and low temperatures, Auger recombination reduces the lifetime in the Si1−xGex layers, and leads to a luminescence vs. temperature which is flat up to 250 K and which is reduced only by a factor of three at room temperature.

scholarly journals Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

2009 ◽  
Vol 129 (9) ◽  
pp. 1029-1031
Author(s):  
V.F. Kovalenko ◽  
S.V. Shutov ◽  
Ye.A. Baganov ◽  
M.M. Smyikalo
Keyword(s):  
Gallium Arsenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Origin of the near-band-edge luminescence in MgxZn1−xO alloys

2010 ◽  
Vol 107 (1) ◽  
pp. 013704 ◽  
Author(s):  
Alexander Müller ◽  
Marko Stölzel ◽  
Christof Dietrich ◽  
Gabriele Benndorf ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

NEAR‐BAND‐EDGE LUMINESCENCE IN GaAs:Zn

1968 ◽  
Vol 13 (2) ◽  
pp. 51-53 ◽  
Author(s):  
George W. Arnold ◽  
David K. Brice
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence
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