scholarly journals Deep level effects in silicon and germanium after plasma hydrogenation

1983 ◽  
Vol 12 (6) ◽  
pp. 1003-1014 ◽  
Author(s):  
S. J. Pearton ◽  
J. M. Kahn ◽  
E. E. Haller
Keyword(s):  
Deep Level ◽  
Silicon And Germanium ◽  
Plasma Hydrogenation

Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason
Keyword(s):  
Reverse Bias ◽  
Deep Level ◽  
Current Transient ◽  
Zero Bias ◽  
Lithium Diffusion ◽  
Transient Spectroscopy ◽  
Plasma Hydrogenation

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

Hydrogen-Related Electron Traps in GaAs and their Relation to Crystal Stoichiometry

1995 ◽  
Vol 378 ◽  
Author(s):  
Tatsuyuki Shinagawa ◽  
Tsugunori Okumura
Keyword(s):  
Deep Level ◽  
Deep Levels ◽  
Electron Traps ◽  
Before And After ◽  
Antisite Defects ◽  
Plasma Hydrogenation

ABSTRACTDeep-level formation upon plasma hydrogenation has been studied with n-GaAs grown by various methods. Four electron traps (EH0-EH3) were generated in As-rich n-GaAs crystals. No electron traps were observed in the LPE layer before and after hydrogenation. The hydrogen as well as excess arsenic defects are responsible for the formation of these deep levels. Two of the generated levels in our study, EH0/EH2, exhibit metastability and are identical to the M3/M4 levels reported by Buchwald et al. It can be speculated that both diffused hydrogen and already existing As antisite defects are responsible for the generation of the metastable defects.

Investigation of irradiation-induced nucleation processes in silicon and germanium

1995 ◽  
Vol 53 ◽  
pp. 224-225
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov
Keyword(s):  
Room Temperature ◽  
Crystal Size ◽  
Initial Distribution ◽  
Engineering Control ◽  
Size Evolution ◽  
Silicon And Germanium ◽  
Ge Quantum Dot ◽  
And Control ◽  
Germanium Quantum Dots ◽  
Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Electron paramagnetic resonance in silicon and germanium

1964 ◽  
Vol 83 (7) ◽  
pp. 433-502 ◽  
Author(s):  
L.D. Bogomolova ◽  
V.N. Lazukin ◽  
I.V. Chepeleva
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Silicon And Germanium ◽  
Electron Paramagnetic

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

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