GaSb-Ge pseudobinary phase diagram

1982 ◽  
Vol 11 (1) ◽  
pp. 53-58 ◽  
Author(s):  
S. I. Shah ◽  
K. C. Cadien ◽  
J. E. Greene
Keyword(s):  
Phase Diagram ◽  
Pseudobinary Phase Diagram

AuCu–Sn pseudobinary phase diagram

2002 ◽  
Vol 337 (1-2) ◽  
pp. 289-295 ◽  
Author(s):  
Christian Noel C. Luciano ◽  
Koh-ichi Udoh ◽  
Masaharu Nakagawa ◽  
Shigeki Matsuya ◽  
Michio Ohta
Keyword(s):  
Phase Diagram ◽  
Pseudobinary Phase Diagram

Weldability Approach to Duplex Stainless Steels Using Multicomponent Phase Diagrams

2005 ◽  
Vol 475-479 ◽  
pp. 2765-2768 ◽  
Author(s):  
Antonio J. Ramirez ◽  
Sérgio Duarte Brandi
Keyword(s):  
Phase Diagram ◽  
Phase Transformations ◽  
Phase Diagrams ◽  
Stainless Steels ◽  
Equilibrium Phase ◽  
Duplex Stainless Steels ◽  
Pseudobinary Phase Diagram ◽  
Equilibrium Process ◽  
Diagram Approach ◽  
Joint Microstructures

Welding is a non-equilibrium process. However, some weldability issues, as the extension of the heat-affected zone (HAZ) can be addressed using equilibrium phase diagrams. The 70 wt% Fe-Cr-Ni pseudo-binary phase diagram is commonly used to establish the phase transformations during welding of duplex stainless steels. The predicted results are assumed to be reasonably good for most of the duplex stainless steels. Thermodynamic calculations were used to determine multicomponent phase diagrams and volumetric fraction of phases present as a function of temperature several commercial duplex stainless steels. Results showed that simplified pseudobinary phase diagram approach is valid to estimate welded joint microstructures only for the low alloy duplex stainless steels as UNS S32304, but phase transformations and mainly solidification paths of high alloy duplex stainless steels should predicted only using a multi-component phase diagram.

Growth and characterization of Al–Cu–Li quasicrystals

1988 ◽  
Vol 3 (2) ◽  
pp. 233-237 ◽  
Author(s):  
J. M. Parsey ◽  
H. S. Chen ◽  
A. R. Kortan ◽  
F. A. Thiel ◽  
A. E. Miller ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Alloy System ◽  
Icosahedral Phase ◽  
Solidification Velocity ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Pseudobinary Phase Diagram ◽  
Melt Composition

The alloy system Al–Li–Cu was investigated extensively over the composition range 5.8–8 Al–Cu–3Li to develop a detailed understanding of the formation and properties of the icosahedral phase, known as T2. Material from the various charges was analyzed by optical and electron microscopy, energy dispersive x-ray analysis, differential thermal analysis, and differential scanning calorimetry. The role of the melt composition and the solidification velocity were found to be crucial in determining the micro- and macrostructure and the existence of the icosahedral phase. A pseudobinary phase diagram for the region around Al6CuLi3, is presented based on these analyses. Based on this phase diagram the largest single icosahedral crystals of Al5.1CuLi3 yet reported, with diameters greater than 1 cm, were produced by Bridgman methods.

X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
J.F. Chen ◽  
C. R. Wie ◽  
F. A. Junga
Keyword(s):  
Phase Diagram ◽  
Sharp Increase ◽  
Emission Spectra ◽  
Etch Pit Density ◽  
Double Crystal ◽  
X Ray ◽  
Etch Pit ◽  
In Doping ◽  
Good Crystalline Quality ◽  
Pseudobinary Phase Diagram

ABSTRACTThe effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculated from the pseudobinary phase diagram of the ternary system at a dilute In concentration. The full widths at halfmaximum (FWHM) of x-ray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 × 1019 cm−3, beyond which a sharp increase in the FWHM is observed. Etch pit density (EPD) measurement shows that the dislocation density is reduced by doping the epi-layer with In. At the optimal In concentration of 2.4 × 1019 cm−3, the EPD is reduced by a factor of 20 when measured at the surface of a 9 um thick epilayer.Photoluminesce measurements made at 15 K show two sharp emission spectra near the bandedge. The relative intensities of the two emissions, I(l.49eV)/I(l.5eV) are reduced with increasing In content. This suggests that incorporation of Carbon acceptors is suppressed by In doping in the GaAs epilayers. The FWHM as small as 5 meV of the bandedge transition was obtained for the epi-layer doped with In concentration of 2.4 × 1019 cm−3.

The Solidus Boundary in the GaAs-GaP Pseudobinary Phase Diagram

1972 ◽  
Vol 119 (10) ◽  
pp. 1426 ◽  
Author(s):  
L M. Foster ◽  
J. E. Scardefield ◽  
J. F. Woods
Keyword(s):  
Phase Diagram ◽  
Pseudobinary Phase Diagram ◽  
Solidus Boundary

The pseudobinary phase diagram cis-/trans-azobenzene and the cis → trans isomerization in various states of aggregation

1989 ◽  
Vol 35 (2) ◽  
pp. 515-526 ◽  
Author(s):  
Sabine Eligehausen ◽  
Stefan M. Sarge ◽  
Gerlind Öhlschläger ◽  
Heiko K. Cammenga
Keyword(s):  
Phase Diagram ◽  
Trans Isomerization ◽  
Pseudobinary Phase Diagram ◽  
Trans Azobenzene
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