High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

1994 ◽  
Vol 23 (7) ◽  
pp. 675-679 ◽  
Author(s):  
Yi-Jen Chan ◽  
Ming-Ta Yang ◽  
Tzu-Jin Yeh ◽  
Jen-Inn Chyi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
High Uniformity ◽  
Channel Structures

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers

2017 ◽  
Vol 34 (1) ◽  
pp. 018101
Author(s):  
Hai-Long Yu ◽  
Hao-Yue Wu ◽  
Hai-Jun Zhu ◽  
Guo-Feng Song ◽  
Yun Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gaas Substrates ◽  
Lt Gaas

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

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