Average effective interdiffusion coefficients and the Matano plane composition

1996 ◽  
Vol 27 (9) ◽  
pp. 2504-2509 ◽  
Author(s):  
M. A. Dayananda
Keyword(s):  
Matano Plane ◽  
Interdiffusion Coefficients

scholarly journals InfPolyn, a Nonparametric Bayesian Characterization for Composition-Dependent Interdiffusion Coefficients

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3635
Author(s):  
Wei-W. Xing ◽  
Ming Cheng ◽  
Kaiming Cheng ◽  
Wei Zhang ◽  
Peng Wang
Keyword(s):  
Interdiffusion Coefficient ◽  
Diffusion Equations ◽  
Numerical Inversion ◽  
Extended Model ◽  
Parametric Form ◽  
Physical Processes ◽  
Large Margin ◽  
Statistical Framework ◽  
Fitting Method ◽  
Interdiffusion Coefficients

Composition-dependent interdiffusion coefficients are key parameters in many physical processes. However, finding such coefficients for a system with few components is challenging due to the underdetermination of the governing diffusion equations, the lack of data in practice, and the unknown parametric form of the interdiffusion coefficients. In this work, we propose InfPolyn, Infinite Polynomial, a novel statistical framework to characterize the component-dependent interdiffusion coefficients. Our model is a generalization of the commonly used polynomial fitting method with extended model capacity and flexibility and it is combined with the numerical inversion-based Boltzmann–Matano method for the interdiffusion coefficient estimations. We assess InfPolyn on ternary and quaternary systems with predefined polynomial, exponential, and sinusoidal interdiffusion coefficients. The experiments show that InfPolyn outperforms the competitors, the SOTA numerical inversion-based Boltzmann–Matano methods, with a large margin in terms of relative error (10x more accurate). Its performance is also consistent and stable, whereas the number of samples required remains small.

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Holländer ◽  
R. Butz ◽  
S. Mantl
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Buffer Layers ◽  
Arrhenius Law ◽  
Ion Scattering ◽  
Strained Si ◽  
The Individual ◽  
Interdiffusion Coefficients ◽  
Fourier Algorithm

ABSTRACTThe interdiffusion in MBE-grown Si/Si1−xGex superlattices was measured by Rutherford backscattering spectrometry. The superlattices consisted of 5 periods of 100 !A Si and 100 !A Si1−xGex layers with Ge concentrations, x, between 0.20 and 0.70. Both, asymmetrically strained superlattices, grown on Si(100), as well as symmetrically strained superlattices, grown on relaxed Si1−y.Gey buffer layers were investigated. Rapid thermal annealing in the temperature range between 900°C and 1125°C leads to significant interdiffusion between the individual layers, indicated by a decrease of the amplitudes of the backscattering spectra. Interdiffusion coefficients were deduced using a Fourier algorithm. The interdiffusion coefficients follow an Arrhenius law for a given Ge concentration. The interdiffusivity increases significantly with increasing Ge concentration.

Interdiffusion in Co/Ta Multilayer Thin Films

2005 ◽  
Vol 237-240 ◽  
pp. 554-559 ◽  
Author(s):  
Hui Myeong Lee ◽  
Byeong Seon Lee ◽  
Chan Gyu Lee ◽  
Yasunori Hayashi ◽  
Bon Heun Koo
Keyword(s):  
Structural Relaxation ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Stress Release ◽  
X Ray ◽  
Angle Measurements ◽  
Peak Intensity ◽  
Straight Line ◽  
Initial Stage ◽  
Interdiffusion Coefficients

We will discuss the stress release phenomena, structural relaxation and interdiffusion processes during annealing. The [Co(4nm)/Ta(4nm)]38 multilayers were prepared by dc magnetron sputtering on Si substrate. The multilayers were annealed at various temperatures (523 - 673K) in vacuum (under 10-5 torr) furnace. The effective interdiffusion coefficients were determined from the slope of the best straight line fit of the first peak intensity versus annealing time [d ln(I(t)/I(0)) /dt] by X-ray diffraction (XRD) low angle measurements. The drastic decrease of the relative intensity in the initial stage shown due to the structural relaxation was excluded in the calculation of effective interdiffusion coefficients. The temperature dependence of interdiffusion in the range of 523 - 673K is described by D = 3.2×10-19 exp(-0.51±0.11 eV/kT) m2s-1.

Sign in / Sign up

Export Citation Format

Share Document