The kinetics of multilayered titanium-silicide coatings grown by the pack cementation method

1995 ◽  
Vol 26 (4) ◽  
pp. 777-791 ◽  
Author(s):  
Brian V. Cockeram ◽  
Robert A. Rapp
Keyword(s):  
Pack Cementation ◽  
Titanium Silicide ◽  
Kinetics Of

Growth Kinetics of TiAl3 Diffusion Coating by Pack Cementation on Beta 21-S

2020 ◽  
Vol 41 (3) ◽  
pp. 181-190
Author(s):  
N. Chaia ◽  
C. M. Cossu ◽  
C. J. Parrisch ◽  
J. D. Cotton ◽  
G. C. Coelho ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Diffusion Coating ◽  
Pack Cementation ◽  
Kinetics Of

scholarly journals Formation Mechanism of Aluminide Diffusion Coatings on Ti and Ti-6Al-4V Alloy at the Early Stages of Deposition by Pack Cementation

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3097
Author(s):  
Hailiang Du ◽  
Ning Tan ◽  
Li Fan ◽  
Jiajie Zhuang ◽  
Zhichao Qiu ◽  
...  
Keyword(s):  
Outer Layer ◽  
Aluminide Coating ◽  
Energy Dispersive Spectrometer ◽  
Pack Cementation ◽  
X Ray Diffraction ◽  
Diffusion Coatings ◽  
Early Stages ◽  
Outward Migration ◽  
Kinetics Of ◽  
Precision Balance

The diffusion coatings were deposited on commercially pure Ti and Ti-6Al-4V alloy at up to 1000 °C for up to 10 h using the pack cementation method. The pack powders consisted of 4 wt% Al (Al reservoir) and 4 wt% NH4Cl (activator) which were balanced with Al2O3 (inert filler). The growth kinetics of coatings were gravimetrically measured by a high precision balance. The aluminised specimens were characterised by means of scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). At the early stages of deposition, a TiO2 (rutile) scale, other than aluminide coating, was developed on both materials at <900 °C. As the experimental temperature arose above 900 °C, the rutile layer became unstable and reduced to the low oxidation state of Ti oxides. When the temperature increased to 1000 °C, the TiO2 scale dissociated almost completely and the aluminide coating began to develop. After a triple-layered coating was generated, the coating growth was governed by the outward migration of Ti species from the substrates and obeyed the parabolic law. The coating formed consisted of an outer layer of Al3Ti, a mid-layer of Al2Ti and an inner layer of AlTi. The outer layer of Al3Ti dominated the thickness of the aluminide coating.

Thermal oxidation kinetics of CrSi2 powder synthesized by pack cementation process

2016 ◽  
Vol 125 (1) ◽  
pp. 111-120 ◽  
Author(s):  
E. Tarani ◽  
D. Chaliampalias ◽  
E. Pavlidou ◽  
K. Chrissafis ◽  
G. Vourlias
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Pack Cementation ◽  
Thermal Oxidation Kinetics ◽  
Kinetics Of ◽  
Pack Cementation Process

Kinetics of titanium silicide formation by rapid thermal processing

1989 ◽  
Vol 333 (4-5) ◽  
pp. 569-575 ◽  
Author(s):  
W. Pamler ◽  
K. Wangemann ◽  
W. Bensch ◽  
E. Bußmann ◽  
A. Mitwalsky
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Kinetics Of

Improving the high-temperature oxidation resistance of Zr2Al3C4 by silicon pack cementation

2008 ◽  
Vol 23 (8) ◽  
pp. 2275-2282 ◽  
Author(s):  
L.F. He ◽  
Y.W. Bao ◽  
M.S. Li ◽  
J.Y. Wang ◽  
Y.C. Zhou
Keyword(s):  
Oxidation Resistance ◽  
High Temperature Oxidation ◽  
Pack Cementation ◽  
Oxidation Products ◽  
Aluminosilicate Glass ◽  
Silicide Coating ◽  
Temperature Oxidation ◽  
Outward Diffusion ◽  
Parabolic Law ◽  
Kinetics Of

Silicon pack cementation has been applied to improve the oxidation resistance of Zr2Al3C4. The Si pack coating is mainly composed of an inner layer of ZrSi2 and SiC and an outer layer of Al2O3 at 1200 °C. The growth kinetics of silicide coating at 1000–1200 °C obey a parabolic law with an activation energy of 110.3 ± 16.7 kJ/mol, which is controlled by inward diffusion of Si and outward diffusion of Al. Compared with Zr2Al3C4, the oxidation resistance of siliconized Zr2Al3C4 is greatly improved due to the formation of protective oxidation products, aluminosilicate glass, mullite, and ZrSiO4.

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