Effect of the composition of ohmic contacts on degradation of light-emitting diodes based on Al x Ga1−x As heterostrctures

1996 ◽  
Vol 63 (2) ◽  
pp. 200-202
Author(s):  
I. A. Bocharova ◽  
T. O. Bud'ko ◽  
É. V. Zaporozhets ◽  
L. I. Romanova ◽  
E. A. Tyavlovskaya
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Effect Of The Composition

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Improvement of the reverse leakage behavior of Ag-based ohmic contacts for GaN-based light-emitting diodes using MgZnO interlayer

2006 ◽  
Vol 129 (1-3) ◽  
pp. 176-179 ◽  
Author(s):  
Hyun-Gi Hong ◽  
June-O Song ◽  
Takhee Lee ◽  
I.T. Ferguson ◽  
Joon Seop Kwak ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

High transparency of Ag∕Zn–Ni solid–solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

2005 ◽  
Vol 86 (10) ◽  
pp. 102102 ◽  
Author(s):  
Dong-Seok Leem ◽  
June-O Song ◽  
Woong-Ki Hong ◽  
Jeong-Tae Maeng ◽  
J. S. Kwak ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ultraviolet Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Transparency ◽  
Ultraviolet Light Emitting Diodes

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4990-4992 ◽  
Author(s):  
June-O Song ◽  
Dong-Seok Leem ◽  
J. S. Kwak ◽  
O. H. Nam ◽  
Y. Park ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts

Displays ◽  
2007 ◽  
Vol 28 (3) ◽  
pp. 129-132 ◽  
Author(s):  
Y. Yao ◽  
C. Jin ◽  
Z. Dong ◽  
Z. Sun ◽  
S.M. Huang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

2018 ◽  
Vol 7 (6) ◽  
pp. Q116-Q122 ◽  
Author(s):  
Xingtong Liu ◽  
Ning Li ◽  
Jinfeng Hu ◽  
Yinlin Gao ◽  
Ruiqing Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes

2010 ◽  
Vol 48 (5) ◽  
pp. 456-461
Author(s):  
Ki Man Kang ◽  
Min Joo Park ◽  
Joon Seop Kwak ◽  
Hyun Soo Kim ◽  
Kwang Woo Kwon ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

2011 ◽  
Vol 20 (03) ◽  
pp. 521-525 ◽  
Author(s):  
WENTING HOU ◽  
THEERADETCH DETCHPROHM ◽  
CHRISTIAN WETZEL
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Voltage Drop ◽  
Light Emitting ◽  
Low Resistance ◽  
Electrical Devices ◽  
P Type ◽  
Lower Series ◽  
Post Deposition

Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts.

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