Thermal stability of SIS tunnel junction with silicon barrier

1996 ◽  
Vol 46 (S2) ◽  
pp. 675-676 ◽  
Author(s):  
I. Vávra ◽  
P. Lobotka ◽  
Š. Gaži ◽  
J. Dérer ◽  
J. Kubêna ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Thermal Stability Of ◽  
Sis Tunnel Junction

Improved thermal stability of Mn-Ir-based magnetic tunnel junction with nano-oxide layer

2004 ◽  
Vol 201 (8) ◽  
pp. 1716-1719
Author(s):  
S. Y. Yoon ◽  
Y. I. Kim ◽  
D. H. Lee ◽  
Y. S. Kim ◽  
S. J. Suh
Keyword(s):  
Thermal Stability ◽  
Oxide Layer ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nano Oxide ◽  
Thermal Stability Of

Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness

2002 ◽  
Vol 92 (10) ◽  
pp. 6241-6244 ◽  
Author(s):  
J. H. Lee ◽  
S. J. Kim ◽  
C. S. Yoon ◽  
C. K. Kim ◽  
B. G. Park ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Thermal Stability Of

Influence of a composite free layer structure on thermal stability of perpendicular magnetic tunnel junction

2018 ◽  
Vol 124 (6) ◽  
pp. 063903 ◽  
Author(s):  
Witold Skowroński ◽  
Stanisław Łazarski ◽  
Piotr Rzeszut ◽  
Sławomir Ziętek ◽  
Jakub Chęciński ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Layer Structure ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Thermal Stability Of

Determination of Thermal Stability of Magnetic Tunnel Junction Using Time-Resolved Single-Shot Measurement

2014 ◽  
Vol 50 (1) ◽  
pp. 1-4 ◽  
Author(s):  
C. T. Chao ◽  
C. Y. Kuo ◽  
Lance Horng ◽  
M. Tsunoda ◽  
M. Takahashi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Single Shot ◽  
Time Resolved ◽  
Thermal Stability Of

Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars

2012 ◽  
Vol 112 (5) ◽  
pp. 053922 ◽  
Author(s):  
D. Markó ◽  
T. Devolder ◽  
K. Miura ◽  
K. Ito ◽  
Joo-Von Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Material Parameters ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Sign in / Sign up

Export Citation Format

Share Document