Nonequilibrium lateral photoconductivity of GaAs/AlxGa1−xAs quantum-well superlattices at low temperature

1996 ◽  
Vol 46 (S5) ◽  
pp. 2511-2512 ◽  
Author(s):  
Igor Rudnev ◽  
Vladimir F. Elesin ◽  
Vladimir Kadushkin ◽  
Elena Shangina
Keyword(s):  
Low Temperature ◽  
Quantum Well

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

Low‐temperature operating life of continuous 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers grown on Si

1991 ◽  
Vol 69 (10) ◽  
pp. 6844-6849 ◽  
Author(s):  
D. C. Hall ◽  
N. Holonyak ◽  
D. G. Deppe ◽  
M. J. Ries ◽  
R. J. Matyi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Operating Life ◽  
Temperature Operating

Quantum well laser operation at low temperature in strong magnetic fields

1983 ◽  
Vol 48 (8) ◽  
pp. 671-673 ◽  
Author(s):  
P. Gavrilovic ◽  
K. Hess ◽  
N. Holonyak ◽  
R.D. Burnham ◽  
T.L. Paoli ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Laser Operation ◽  
Strong Magnetic Fields ◽  
Quantum Well Laser

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

2002 ◽  
Vol 81 (16) ◽  
pp. 2938-2940 ◽  
Author(s):  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
M. Shatalov ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Ultraviolet Emission ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Deep Ultraviolet Emission

(Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol MA2020-01 (16) ◽  
pp. 1073-1073
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

Sheet Density and Well Thickness Effects on Photoluminescence from Pseudomorphic HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
C. Colvard ◽  
N. Nouri ◽  
H. Lee ◽  
D. Ackley
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Fermi Level ◽  
Excellent Agreement ◽  
Fermi Energy ◽  
Carrier Density ◽  
Two Dimensional ◽  
Fermi Edge ◽  
Low Temperature Photoluminescence ◽  
Sheet Density

ABSTRACTLow temperature photoluminescence was studied in a large number of pseudomorphic HEMT's having an InxGa1−xAs quantum well. The spectra show strong qualitative differences when the Fermi level is above or below the second conduction subband, and in the latter case they are power dependent. A slight enhancement is seen at the Fermi edge only when it lies close to the higher subband. Excellent agreement is found between the measured Fermi energy and the two-dimensional carrier density in the well.

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