Substoichiometric separation of indium by extraction with 8-hydroxyquinoline and its application to the determination of indium in semiconductor grade silicon

1974 ◽  
Vol 20 (2) ◽  
pp. 521-527 ◽  
Author(s):  
W. Żmijewska
Keyword(s):  
Grade Silicon ◽  
Substoichiometric Separation

scholarly journals Determination of a definition of solar grade silicon. Final report, October 1975--September 1976

1976 ◽  
Author(s):  
M.H. Christ ◽  
K.P. Gupta ◽  
H.W. Gutsche ◽  
D.E. Hill ◽  
W.F. Tucker ◽  
...  
Keyword(s):  
Final Report ◽  
Solar Grade Silicon ◽  
Grade Silicon ◽  
Definition Of

scholarly journals Determination of a definition of solar grade silicon. Third quarterly report, 1 April--30 June 1976

1976 ◽  
Author(s):  
M.H. Christ ◽  
K.P. Gupta ◽  
H.W. Gutsche ◽  
D.E. Hill ◽  
W.F. Tucker ◽  
...  
Keyword(s):  
Solar Grade Silicon ◽  
Grade Silicon ◽  
Definition Of

scholarly journals Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals

1994 ◽  
Vol 41 (4) ◽  
pp. 1026-1030 ◽  
Author(s):  
N. Derhacobian ◽  
P. Fine ◽  
J.T. Walton ◽  
Y.K. Wong ◽  
C.S. Rossington ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Grade Silicon ◽  
Silicon And Germanium ◽  
Recombination Velocity

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

2017 ◽  
Vol 105 (7) ◽  
Author(s):  
Barbara Karches ◽  
Jonas Schön ◽  
Heiko Gerstenberg ◽  
Gabriele Hampel ◽  
Patricia Krenckel ◽  
...  
Keyword(s):  
Neutron Activation Analysis ◽  
Theoretical Model ◽  
Activation Analysis ◽  
Neutron Activation ◽  
Low Cost ◽  
Solar Grade Silicon ◽  
Metal Impurities ◽  
Crystallization Experiments ◽  
Grade Silicon

AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

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