Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

1977 ◽  
Vol 38 (1-2) ◽  
pp. 29-35 ◽  
Author(s):  
H. Jaskólska ◽  
L. Rowińska ◽  
L. Waliś
Keyword(s):  
Neutron Activation Analysis ◽  
Activation Analysis ◽  
Neutron Activation ◽  
Grade Silicon

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

2017 ◽  
Vol 105 (7) ◽  
Author(s):  
Barbara Karches ◽  
Jonas Schön ◽  
Heiko Gerstenberg ◽  
Gabriele Hampel ◽  
Patricia Krenckel ◽  
...  
Keyword(s):  
Neutron Activation Analysis ◽  
Theoretical Model ◽  
Activation Analysis ◽  
Neutron Activation ◽  
Low Cost ◽  
Solar Grade Silicon ◽  
Metal Impurities ◽  
Crystallization Experiments ◽  
Grade Silicon

AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

energyo ◽  
2019 ◽  
Author(s):  
Barbara Karches ◽  
Jonas Schön ◽  
Heiko Gerstenberg ◽  
Gabriele Hampel ◽  
Patricia Krenckel ◽  
...  
Keyword(s):  
Neutron Activation Analysis ◽  
Activation Analysis ◽  
Neutron Activation ◽  
Solar Grade Silicon ◽  
Grade Silicon
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