Abstract:The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580 °C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm−3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.
ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.
ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.