A diffusion-kinetic approach for the physical understanding of solid-state silicide formation in thin and thick films

1986 ◽  
Vol 7 (2) ◽  
pp. 241-250 ◽  
Author(s):  
F. Panini ◽  
M. Costato ◽  
G. Majni
Keyword(s):  
Solid State ◽  
Thick Films ◽  
Kinetic Approach ◽  
Silicide Formation ◽  
Diffusion Kinetic ◽  
Physical Understanding

Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon

1992 ◽  
Vol 260 ◽  
Author(s):  
Feng Hong ◽  
Bijoy K. Patnaik ◽  
George A. Rozgonyi
Keyword(s):  
Solid State ◽  
Diffusion Barrier ◽  
Critical Parameter ◽  
Thermal Evaporation ◽  
Amorphous Layer ◽  
Selective Removal ◽  
State Interaction ◽  
Silicide Formation ◽  
Dual Source ◽  
Solid State Interaction

ABSTRACTThe formation of a 12nm thick, continuous and thermally stable COSi2 layer was described in our previous work [MRS Proc. 238, 587 (1992)]. Interdiffusion in the Co/Ti-Si multilayer system has been further studied and the initial Ti(O) thickness is shown to be a critical parameter in controlling its effectiveness as a diffusion barrier, and in modulating the Co-Si and Ti-Si compctctive reactions. Three Ti(O) and three Co layers with thickness from ∼5nm 20nm were deposited sequentially, with Ti(O) as the first layer, on Si-(100) substrates by dual source thermal evaporation. The morphology of the CoSix/Si interface was strongly influenced by Ti(O) thickness from ∼5nm to ∼10nm, and a 12nm thick uniform CoSi2 layer with ∼28μΩ-cm resistivity was produced as decribed previously. When the initial Ti(O) thickness was increased to ∼20nm and the Co thickness set at -10nm, Co diffusion was suppressed and Ti reacted with Si yielding an ∼10nm amorphous TiSix layer at 550°C. This amorphous layer transformed to a 15nm thick uniform C-54 TiSi2 layer after selective removal of upper layers and a 750°C plus 800°C annealing. A flat silicide/Si interface and a ∼58μΩ-cm resistivity were obtained. The significance of both thermodynamic and kinetic factors in the compctetive reactions is discussed.

The Preparation of Bulk and Thick Films of YBa2Cu3O7-y Using a Solution Technique

1987 ◽  
Vol 99 ◽  
Author(s):  
P. Barboux ◽  
J. M. Tarascon ◽  
B. G. Bagley ◽  
L. H. Greene ◽  
G. W. Hull ◽  
...  
Keyword(s):  
Solid State ◽  
Thick Films ◽  
Reaction Times ◽  
Microscopic Level ◽  
Solid State Reactions ◽  
Solution Technique ◽  
Particle Sizes ◽  
Large Area ◽  
Size Dispersion ◽  
Technological Interest

ABSTRACTWe have synthesized the high Tc superconducting oxide YBa2Cu3O7-y using a solution technique and compare the resultant properties to materials synthesized by solid state reactions. Because the cations are mixed at the microscopic level, we observe that this solution technique allows lower reaction temperatures and shorter reaction times to obtain the superconducting material. They yield materials with particle sizes of about 1 μm and having a narrow size dispersion (as compared to the typically 50 μm particle sizes obtained by solid state reactions). The smaller, uniform particle sizes yield denser compacts upon sintering. Densities of 90% have been achieved and metallic-like behavior improves and is correlated with increasing density. The solution derived materials superconduct at 91 K and have narrow transition temperatures (0.6K width) which we attribute to sample compositional and structural homogeneity. Because we are able to produce stable, viscous gels, we have investigated the preparation of large area thick films on various substrates of technological interest (e.g. alumina, zirconia.strontium titanate).

Isotope separation during silicide formation by solid state reaction and its relation with the growth limiting mechanism

1989 ◽  
Vol 38 (1-4) ◽  
pp. 196 ◽  
Author(s):  
P. Gas ◽  
C. Zaring ◽  
C.S. Petersson ◽  
B.G. Svensson ◽  
M. Östling
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Isotope Separation ◽  
Silicide Formation

A New Model for Thermal Diffusion: Kinetic Approach

2008 ◽  
Vol 130 (33) ◽  
pp. 10963-10969 ◽  
Author(s):  
Pierre-Arnaud Artola ◽  
Bernard Rousseau ◽  
Guillaume Galliéro
Keyword(s):  
Thermal Diffusion ◽  
Kinetic Approach ◽  
Diffusion Kinetic ◽  
New Model

Silicide formation by solid state reaction of Mo-Ni and Mo-Co films with Si(100)

1991 ◽  
Vol 199 (1) ◽  
pp. 107-112 ◽  
Author(s):  
R.S. Rastogi ◽  
V.D. Vankar ◽  
K.L. Chopra
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Silicide Formation

Stress evolution in a Ti/Al(Si,Cu) dual layer during annealing

2001 ◽  
Vol 673 ◽  
Author(s):  
Ola Bostrom ◽  
Patrice Gergaud ◽  
Olivier Thomas ◽  
Philippe Boivin
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Silicide Formation ◽  
Stress Evolution ◽  
Average Force ◽  
Aluminum Films ◽  
Titanium Aluminum ◽  
Curvature Measurements ◽  
Volume Decrease

ABSTRACTMechanical stress and stress evolution in interconnections may cause reliability problems in IC circuits. It is thus of great importance to understand the origin of this stress.In this paper, the stress evolution during the solid state reaction between blanket titanium and aluminum films has been studied by in-situ substrate curvature measurements. Whereas the formation of TiAl3 is expected to induce large tensile stress because of a global volume decrease of 6-8%, curvature measurements of titanium/aluminum dual layers during annealing at 450°C suggests the formation of a compressive compound.The evolution of the average force per unit width of the layer during the solid state reaction is interpreted on the basis of a phenomenological model used to describe stress evolution during silicide formation.

Silicide Formation Reactions in a-Si/Co Multilayered Samples

2008 ◽  
Vol 277 ◽  
pp. 3-8
Author(s):  
Z. Balogh ◽  
Csaba Cserháti ◽  
Z. Erdélyi ◽  
A. Csik ◽  
G.A. Langer ◽  
...  
Keyword(s):  
Growth Rate ◽  
Solid State ◽  
Synchrotron Radiation ◽  
Magnetron Sputtering ◽  
Interface Reaction ◽  
Solid State Reactions ◽  
Silicide Formation ◽  
Parabolic Kinetics ◽  
Heat Treated ◽  
Interface Reaction Control

Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.

In Situ Ellipsometric Studies of Palladium Silicide Formation

1985 ◽  
Vol 54 ◽  
Author(s):  
S. M. Kelso ◽  
R. J. Nemanich ◽  
C. M. Doland
Keyword(s):  
Raman Spectroscopy ◽  
Solid State ◽  
Dielectric Function ◽  
Solid State Reaction ◽  
Silicide Formation ◽  
Spectroscopy Studies ◽  
Palladium Silicide ◽  
Deposited Films

ABSTRACTWe have studied the formation of palladium suicide on clean silicon <111> surfaces using in situ spectroscopie ellipsometry. Pd films of thicknesses from 5 to 50 A were studied both as deposited and after annealing to complete the reaction to Pd2Si. The measured dielectric function spectra were analyzed to determine the amounts of Pd2Si and unreacted Pd. Evidence of Pd-Si solid state reaction was detected after all depositions. In the as-deposited films the fraction of suicide increased with the thickness, up to about 40% for the thickest films (50 Å Pd), while the annealed films were completely reacted. These results are consistent with earlier Raman spectroscopy studies.

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