Optical properties of sol-gel derived vanadium oxide films

1997 ◽  
Vol 8 (1-3) ◽  
pp. 857-865 ◽  
Author(s):  
J. Livage ◽  
G. Guzman ◽  
F. Beteille ◽  
P. Davidson
Keyword(s):  
Optical Properties ◽  
Vanadium Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Vanadium Oxide Films

Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

2013 ◽  
Vol 537 ◽  
pp. 174-178
Author(s):  
Ji Chao Wang ◽  
Guang Ming Wu ◽  
Guo Hua Gao ◽  
Xiao Wei Zhou
Keyword(s):  
Metal Ions ◽  
Vanadium Oxide ◽  
Volume Fraction ◽  
Electrochemical Impedance ◽  
Sol Gel ◽  
Electrochemical Techniques ◽  
Oxide Films ◽  
Dip Coating ◽  
Electrochemical Performances ◽  
Vanadium Oxide Films

Vanadium oxide films were prepared via the sol–gel process and dip coating method, using V2O5as raw materials and H2O2(volume fraction 30) as the solvent. Mn and Ni ions were added to vanadium oxide sol to prepare doping vanadium oxide films. The films were characterized by atomic force microscopy, FT-IR, X-ray diffraction and electrochemical techniques. The add-on of Metal ions will not affect the morphology of the vanadium oxide films, but change the valence of vanadium ion and vanadium oxide crystal phase. Furthermore, cyclic voltammetry curves show that metal ions doping vanadium oxide films exhibit reversible electrochemical reaction. But electrochemical impedance spectroscopy indicates pure vanadium oxide film has a better diffusion rate.

Thin Films of Nanocrystalline Vanadium Dioxide: Modification of the Properties, and Electrical Switching

2020 ◽  
Vol 854 ◽  
pp. 103-108
Author(s):  
A.L. Pergament ◽  
O.Ya. Berezina ◽  
S.V. Burdyukh ◽  
V.P. Zlomanov ◽  
Evgeniy A. Tutov
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Vanadium Dioxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Threshold Value ◽  
Implantation Dose ◽  
Electrical Switching ◽  
Hydrogen Implantation ◽  
Vanadium Oxide Films

Vanadium oxide films have been fabricated by the acetylacetonate and triethoxy vanadyl sol-gel methods on silicon substrates, as well as by magnetron sputtering on glass-ceramic substrates. Additional annealing in reducing atmosphere results in formation of vanadium dioxide or mixed phases with a VO2 predominance. The obtained films demonstrate the metal-insulator transition and electrical switching. In the films produced from triethoxy vanadyl, the peculiarities of electrical properties are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. Also, the effect of doping with hydrogen by means of plasma-immersion ion implantation on the properties of vanadium dioxide is explored. It is shown that the transition parameters in VO2 thin films depend on the hydrogen implantation dose. At doses exceeding a certain threshold value, the films are metallized, and the phase transition no longer occurs.

STUDY OF THE ELECTRICAL PROPERTIES OF SOL-GEL-DERIVED TITANIUM-VANADIUM OXIDE FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4465-4468 ◽  
Author(s):  
GAOLING ZHAO ◽  
GAORONG HAN
Keyword(s):  
Solid Solution ◽  
Electrical Properties ◽  
Vanadium Oxide ◽  
Hall Mobility ◽  
Sol Gel ◽  
Oxide Films ◽  
X Ray Diffraction ◽  
Type Semiconductor ◽  
Titanium Vanadium ◽  
Vanadium Oxide Films

Titanium-vanadium oxide films were prepared by the sol-gel method. The effects of vanadium incorporation on the crystallization behavior TiO 2 were investigated by X-ray diffraction analysis. The results showed that anatase and rutile type solid solution Ti 1-x V x O 2 films were obtained for x < 0.15 and x > 0.15 samples, respectively. Anatase and V 2 O 5 were found in x = 0.15 sample. Moreover, it was found that the crystallization of the film increased with increasing amount of vanadium. The electrical properties of Ti 1-x V x O 2 films were studied by measuring their resistance and Hall mobility. It was revealed that the resistivity of Ti 1-x V x O 2 films decreased with increasing x when the solid solution was formed, while the resistivity increased when the crystallization of vanadium oxide precipitated. The Hall constant was negative, indicating that Titanium-vanadium oxide is an n-type semiconductor. The evolution of the resistance and Hall mobility was ascribed to the 3d electrons of vanadium.

scholarly journals Effects of natural aging on the surface compositions and optical properties of thermochromic vanadium oxide films

2022 ◽  
Vol 890 ◽  
pp. 161941
Author(s):  
Zhenfei Luo ◽  
Qingwei Zhang ◽  
Fei Zhang ◽  
Yaowei Wei ◽  
Zhen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Natural Aging ◽  
Vanadium Oxide Films

Dependence of optical properties of vanadium oxide films on crystallization and temperature

2012 ◽  
Vol 520 (6) ◽  
pp. 2368-2371 ◽  
Author(s):  
M.I. Kang ◽  
I.K. Kim ◽  
E.J. Oh ◽  
S.W. Kim ◽  
J.W. Ryu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Vanadium Oxide Films

Sol-Gel Made Zirconium Mixed Vanadium Oxide Films

2004 ◽  
Vol 264-268 ◽  
pp. 383-386 ◽  
Author(s):  
İ. Türhan ◽  
E. Özkan Z. ◽  
F.Z. Tepehan ◽  
G.G. Tepehan
Keyword(s):  
Vanadium Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Vanadium Oxide Films
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