Study of the spin polarization of unoccupied states near the Fermi level by spin-dependent near-edge absorption spectroscopy

1989 ◽  
Vol 50 (1-4) ◽  
pp. 457-476 ◽  
Author(s):  
G. Schütz ◽  
R. Wienke
Keyword(s):  
Fermi Level ◽  
Spin Polarization ◽  
Absorption Spectroscopy ◽  
Edge Absorption

Linearly polarized CuK-edge absorption spectroscopy ofCuGeO3: Orbital population, band dispersion, and exchange interactions

1999 ◽  
Vol 59 (19) ◽  
pp. 12450-12456 ◽  
Author(s):  
D. Z. Cruz ◽  
M. Abbate ◽  
H. Tolentino ◽  
P. J. Schiling ◽  
E. Morikawa ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Exchange Interactions ◽  
Edge Absorption ◽  
Orbital Population ◽  
Band Dispersion ◽  
Linearly Polarized

Growth of zinc phthalocyanine onto ZnS film investigated by synchrotron radiation-excited X-ray photoelectron and near-edge absorption spectroscopy

2005 ◽  
Vol 596 (1-3) ◽  
pp. 98-107 ◽  
Author(s):  
L. Zhang ◽  
H. Peisert ◽  
I. Biswas ◽  
M. Knupfer ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Zinc Phthalocyanine ◽  
X Ray ◽  
Edge Absorption

Electron-spin polarization near the Fermi level inn-type modulation-doped semiconductor quantum wells

1999 ◽  
Vol 59 (12) ◽  
pp. R7813-R7816 ◽  
Author(s):  
A. L. C. Triques ◽  
J. Urdanívia ◽  
F. Iikawa ◽  
M. Z. Maialle ◽  
J. A. Brum ◽  
...  
Keyword(s):  
Fermi Level ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Electron Spin ◽  
Electron Spin Polarization ◽  
Semiconductor Quantum Wells

Inverse Magnetoresistance In Manganite/SrTiO3/Co Tunnel Junctions

1999 ◽  
Vol 574 ◽  
Author(s):  
J. M. De Teresa ◽  
A. Barthélémy ◽  
J. P. Contour ◽  
A. Fert ◽  
R. Lyonnet ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Spin Polarization ◽  
Density Of States ◽  
High Magnetic Field ◽  
Applied Voltage ◽  
Tunnel Junctions ◽  
Effect Of Temperature ◽  
Half Metallic ◽  
Tunnel Magnetoresistance

AbstractIn La0.7Sr0.3MnO3/SrTiO3/Co tunnel junctions, the half-metallic nature of La0.7Sr0.3MnO3 allows probing the spin polarization of Co. For applied voltage bias around zero volts, an inverse tunnel magnetoresistance is found, indicating the negative spin polarization of Co at the Fermi level as expected from the density of states of the “d” band in Co. The bias dependence of the magnetoresistance reflects the structure of the “d” band density of states of Co. In this article we underline the important consequences for the knowledge of the spin-dependent tunneling in solids brought by these results and describe in detail the effect of temperature and high magnetic field on the magnetoresistance.

Tuning Fermi level of Cr2CoZ (Z=Al and Si) inverse Heusler alloys via Fe-doping for maximum spin polarization

2014 ◽  
Vol 370 ◽  
pp. 81-86 ◽  
Author(s):  
Mukhtiyar Singh ◽  
Hardev S. Saini ◽  
Jyoti Thakur ◽  
Ali H. Reshak ◽  
Manish K. Kashyap
Keyword(s):  
Fermi Level ◽  
Spin Polarization ◽  
Heusler Alloys ◽  
Fe Doping ◽  
Maximum Spin

scholarly journals Amorphous Gallium Phosphate Thin Films : Ga and O K-Edge Absorption Spectroscopy

1997 ◽  
Vol 7 (C2) ◽  
pp. C2-975-C2-977 ◽  
Author(s):  
F. Tourtin ◽  
P. Armand ◽  
A. Ibanez ◽  
G. Tourillon ◽  
E. Philippot
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Edge Absorption ◽  
Gallium Phosphate
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