Structural stability and stacking faults in a laser-melted ZL108 Al-Si alloy containing rare earth

1992 ◽  
Vol 27 (3) ◽  
pp. 671-674 ◽  
Author(s):  
Hu Jiandong
Keyword(s):  
Rare Earth ◽  
Structural Stability ◽  
Stacking Faults

STACKING FAULTS, TWINS, AND THE STRUCTURAL STABILITY OF VAN DER WAALS SOLIDS

1974 ◽  
Vol 35 (C7) ◽  
pp. C7-113-C7-119 ◽  
Author(s):  
J. A. VENABLES ◽  
C. A. ENGLISH ◽  
K. F. NIEBEL ◽  
G. J. TATLOCK
Keyword(s):  
Structural Stability ◽  
Van Der Waals ◽  
Stacking Faults

Influence of rare earth addition on the thermal and structural stability of CaOFe2O3P2O5 glasses

2014 ◽  
Vol 1076 ◽  
pp. 592-599 ◽  
Author(s):  
Haijian Li ◽  
Xiaofeng Liang ◽  
Cuiling Wang ◽  
Huijun Yu ◽  
Zhen Li ◽  
...  
Keyword(s):  
Rare Earth ◽  
Structural Stability ◽  
Rare Earth Addition

Influence of Rare Earth on Shape Memory and Martensitic Transformation Behaviors of a FeMnSiCr Alloy

2005 ◽  
Vol 475-479 ◽  
pp. 1995-1998
Author(s):  
Xing Huang ◽  
Shipu Chen ◽  
T.Y. Hsu
Keyword(s):  
Rare Earth ◽  
Martensitic Transformation ◽  
Shape Memory ◽  
Stacking Faults ◽  
The Other ◽  
Strengthening Effect ◽  
Shape Memory Property ◽  
Solid Solution Strengthening ◽  
Solution Strengthening ◽  
Shockley Dislocation

Proper amount of blend rare earth (RE), e.g. less than 0.2 wt%, was added into a Fe25Mn6Si5Cr alloy and showed beneficial effect on its shape memory property. On the other hand, measurements of internal friction revealed that RE-addition reduces the Ms temperature and the amount of thermal-induced martensite. Higher La-content in thin hcp (e) plates than that in fcc (g) matrix was observed by analytical TEM. Thermodynamic calculations also indicated a relatively high equilibrated concentration in e and a strong interaction between La atom and 1/6<112> Shockley dislocation. Except for the grain refinement and solid-solution strengthening effect, the influence of RE on the g ® e martensitic transformation is discussed in taking into account both the Suzuki Effect and Suzuki Lock. The former results in a reduced stacking fault energy, while the Suzuki Lock hinders the movement of Shockley partials and thus the extension of stacking faults.

Epitaxial Growth of Rare Earth Silicides on (111)Si

1993 ◽  
Vol 312 ◽  
Author(s):  
T. L. Lee ◽  
W. D. Sue ◽  
J. H. Lin ◽  
C. H. Luo ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Diffraction Pattern ◽  
Solid Phase ◽  
Stacking Faults ◽  
Metal Thin Films ◽  
Step Structure ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
Long Time

AbstractEpitaxial YSi2-x, TbSi2-x, and ErSi2-x. have been grown on (111)Si by solid phase epitaxy in ultrahigh vacuum deposited rare earth (RE) metal thin films on silicon. The evolution of vacancy ordering and defect structure in epitaxial RE silicide thin films on (111)Si have been studied by both conventional and high resolution transmission electron microscopy.Additional superlattice spots located at 1/3 <2110> in the diffraction pattern of RESi2-x, are attributed to the formation of ordered vacancy in the Si sublattice planes. The splitting of extra diffraction spots is correlated to the formation of an out-of--step structure. Streakings of the split diffraction spots in the diffraction pattern are attributed to the presence of an out-of-step structure with a range of M values. For YSi2-x and ErSi2-x, the M was found to settle down to a constant value after high temperature and/or long time annealing. For TbSi2-x, M is equal to 5 throughout the annealing.Planar defects in RESi2-x films were analyzed to be stacking faults on {1010} planes with 1/6<1213> displacement vectors. The size and density of stacking faults were found to increase and decrease, respectively, with annealing temperature and/or annealing time.

Structural stability and doping in R2CuO4 (R = rare-earth)

1990 ◽  
Vol 165 (5-6) ◽  
pp. 357-363 ◽  
Author(s):  
Y.Y. Xue ◽  
P.H. Hor ◽  
R.L. Meng ◽  
Y.K. Tao ◽  
Y.Y. Sun ◽  
...  
Keyword(s):  
Rare Earth ◽  
Structural Stability
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