A hydrogen — Vacancy complex at substitutional indium in niobium

1990 ◽  
Vol 60 (1-4) ◽  
pp. 821-824
Author(s):  
R. -D. Roitzheim ◽  
R. Vianden
Keyword(s):  
Vacancy Complex ◽  
Hydrogen Vacancy

Theoretical study of sulfur–hydrogen–vacancy complex in diamond

2001 ◽  
Vol 78 (25) ◽  
pp. 3977-3979 ◽  
Author(s):  
Takehide Miyazaki ◽  
Hideyo Okushi ◽  
Tsuyoshi Uda
Keyword(s):  
Theoretical Study ◽  
Vacancy Complex ◽  
Hydrogen Vacancy

The nitrogen–hydrogen–vacancy complex in GaAs

2004 ◽  
Vol 241 (6) ◽  
pp. 1281-1285 ◽  
Author(s):  
W. Ulrici ◽  
F.-M. Kiessling ◽  
P. Rudolph
Keyword(s):  
Vacancy Complex ◽  
Hydrogen Vacancy

The C-type defect on Si(001) as a hydrogen-vacancy complex

1999 ◽  
Vol 58 (1-2) ◽  
pp. 48-51 ◽  
Author(s):  
Takehide Miyazaki ◽  
Tsuyoshi Uda ◽  
Kiyoyuki Terakura
Keyword(s):  
Vacancy Complex ◽  
Type Defect ◽  
Hydrogen Vacancy

Annealing Behavior of the Hydrogen-Vacancy Complex in Bulk Indium Phosphide Crystals

1998 ◽  
Vol 513 ◽  
Author(s):  
Q. Ye ◽  
J. A. Wolk ◽  
E. D. Bourret-Courchesne ◽  
D. F. Bliss
Keyword(s):  
High Temperature ◽  
Indium Phosphide ◽  
Electron Concentration ◽  
Free Electron ◽  
High Temperature Annealing ◽  
Free Electron Concentration ◽  
Vacancy Complex ◽  
Iron Doped ◽  
Hall Effect Measurements ◽  
Hydrogen Vacancy

ABSTRACTIn order to explain the effects of hydrogen on the electrical properties of bulk indium phosphide crystals, we have performed a series of high temperature annealing studies with both undoped and iron-doped indium phosphide crystals. Our samples were annealed at 900°C for 6, 36, and 72 hours, respectively, under a phosphorus overpressure of five atmospheres. Samples were characterized at 10 K by Fourier transform infrared absorption spectroscopy which allowed us to measure the concentrations of both the Fe2+ and VIn-H4 defects simultaneously. Undoped samples were further characterized by the Hall effect measurements. We find in the iron-doped samples that the [Fe2+]/[Fe3+] ratio decreases gradually with increasing annealing time, indicating a reduction in the number of donors in the samples. In the undoped samples, annealing leads to a reduction of the free electron concentration accompanied by an increase in the 77 K mobility. The increase of the sample's mobility eliminates the possibility that the reduction of the free electron concentration is due to an increase in the concentration of the compensating acceptors. Our explanation for the observed behavior in all samples is that hydrogen acts as a donor and it diffuses out of the crystal during the annealing process. Based on our experimental data, we propose a calibration equation of [VIn-H4] = 4.2×1016 cm−1 × Absorbance (cm−1) which is used to correlate the hydrogen-vacancy complex concentrations with the changes of the VIn-H4 absorption peak in both the iron-doped and the undoped samples. Our results confirm the donor nature of the hydrogen-vacancy complex and provide strong evidence regarding the reduction mechanism of free carrier concentrations in bulk indium phosphide crystals during high temperature annealing under a phosphorus atmosphere.

Thermally stimulated current related to Cu antisite‐vacancy complex defects in Cu‐diffused semi‐insulating GaAs

1994 ◽  
Vol 65 (6) ◽  
pp. 746-748 ◽  
Author(s):  
K. Kuriyama ◽  
K. Tomizawa ◽  
S. Uematsu ◽  
Hirokazu Takahashi
Keyword(s):  
Thermally Stimulated Current ◽  
Vacancy Complex

Hydrogen and deuterium decoration of a vacancy complex in Ni

1986 ◽  
Vol 34 (1) ◽  
pp. 502-505 ◽  
Author(s):  
Gary S. Collins ◽  
Reinhardt B. Schuhmann
Keyword(s):  
Vacancy Complex
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