Ion-implantation induced phase transitions: Order-disorder and amorphous-crystal transformations (CEMS studies)

1986 ◽  
Vol 29 (1-4) ◽  
pp. 1179-1182 ◽  
Author(s):  
A. Fnidiki ◽  
D. Bodin ◽  
J. P. Eymery
Keyword(s):  
Phase Transitions ◽  
Ion Implantation

Phase transitions in the surface layers of materials under ion implantation

1986 ◽  
Vol 95 (2) ◽  
pp. 385-390 ◽  
Author(s):  
M. I. Guseva ◽  
G. V. Goedeeva
Keyword(s):  
Phase Transitions ◽  
Ion Implantation ◽  
Surface Layers

Crystalline phase transitions produced by ion implantation

1979 ◽  
Vol 1 (1) ◽  
pp. 23-33 ◽  
Author(s):  
E. Johnson ◽  
T. Wohlenberg ◽  
W. A. Grant
Keyword(s):  
Phase Transitions ◽  
Ion Implantation ◽  
Crystalline Phase

Phase transitions and epitaxial Ni3Si formation on Ni(100) after high dose silicon ion implantation

1993 ◽  
Vol 74 (7) ◽  
pp. 4792-4794 ◽  
Author(s):  
Z. Rao ◽  
J. S. Williams ◽  
D. K. Sood
Keyword(s):  
Phase Transitions ◽  
Ion Implantation ◽  
High Dose

Coherent V2O3 Precipitates in ɑ-Al2O3 Co-Implanted With Vanadium and Oxygen

1994 ◽  
Vol 354 ◽  
Author(s):  
Laurence A. Gea ◽  
L. A. Boatner ◽  
Janet Rankin ◽  
J. D. Budai
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Ion Implantation ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Structural Phase ◽  
Practical Interest ◽  
Structural Phase Transitions ◽  
Reducing Conditions ◽  
Optical And Electronic Properties

AbstractThe oxides of vanadium VO2 and V2O3 are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, we report the formation of buried precipitates of V2O3 in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V2O3 precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V2O3//(0001) ɑ-Al2O3 and (11-20)V2O3//(0001) ɑ-Al2O3. This finding is in agreement with results obtained elsewhere for thin films of V2O3 deposited on c-axis-oriented sapphire.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Electron Microscopy of Graphite Intercalation Compounds

1982 ◽  
Vol 40 ◽  
pp. 544-545
Author(s):  
G. Timp ◽  
L. Salamanca-Riba ◽  
L.W. Hobbs ◽  
G. Dresselhaus ◽  
M.S. Dresselhaus
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Domain Wall ◽  
Intercalation Compounds ◽  
Lattice Plane ◽  
Wall Model ◽  
Graphite Intercalation Compounds ◽  
Fundamental Symmetry ◽  
Graphite Intercalation

Electron microscopy can be used to study structures and phase transitions occurring in graphite intercalations compounds. The fundamental symmetry in graphite intercalation compounds is the staging periodicity whereby each intercalate layer is separated by n graphite layers, n denoting the stage index. The currently accepted model for intercalation proposed by Herold and Daumas assumes that the sample contains equal amounts of intercalant between any two graphite layers and staged regions are confined to domains. Specifically, in a stage 2 compound, the Herold-Daumas domain wall model predicts a pleated lattice plane structure.

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