The effect of nitrate feeding levels on the pathway of nitrogen incorporation into photosynthesizing leaf metabolism ofDatura stramonium L

1978 ◽  
Vol 49 (3) ◽  
pp. 625-631 ◽  
Author(s):  
O. A. M. Lewis ◽  
T. A. Probyn
Keyword(s):  
Nitrogen Incorporation ◽  
Leaf Metabolism

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

scholarly journals Nitrogen incorporation effects in Fe(001) thin films

2001 ◽  
Vol 89 (11) ◽  
pp. 6314-6319 ◽  
Author(s):  
J. L. Menéndez ◽  
G. Armelles ◽  
A. Cebollada ◽  
F. Briones ◽  
F. Peiró ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Incorporation

scholarly journals Hyperspectral Light-Sheet Raman Microscope for Imaging Leaf Metabolism

2021 ◽  
Vol 120 (3) ◽  
pp. 263a-264a
Author(s):  
Sandeep Pallikkuth ◽  
Roxana Khoshravesh ◽  
David T. Hanson ◽  
Jerilyn A. Timlin ◽  
Keith A. Lidke
Keyword(s):  
Light Sheet ◽  
Leaf Metabolism

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

2019 ◽  
Vol 775 ◽  
pp. 1301-1306 ◽  
Author(s):  
Xiaodi Wei ◽  
Hong Huang ◽  
Cong Ye ◽  
Wei Wei ◽  
Hao Zhou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Device Performance ◽  
Nitrogen Incorporation
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