The use of calorimetric data for estimation of the point defect concentration in solids

1988 ◽  
Vol 33 (1) ◽  
pp. 279-284 ◽  
Author(s):  
N. F. Uvarov ◽  
E. F. Hairetdinov
Keyword(s):  
Point Defect ◽  
Defect Concentration ◽  
Calorimetric Data

An Examination of the Mechanisms of Si Diffusion in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Shaofeng Yu ◽  
Ulrich M. Gosele ◽  
Teh Y. Tan
Keyword(s):  
Fermi Level ◽  
Point Defect ◽  
Essential Role ◽  
Defect Concentration ◽  
Experimental Results ◽  
Quantitative Models ◽  
Effect Mechanism ◽  
Level Effect

AbstractAn examination of the three available quantitative models of Si diffusion in GaAs has led to the conclusion that the Fermi-level effect mechanism plays the most essential role. In some experimental results a point defect concentration transient is involved which should be incoorporated in future models.

scholarly journals Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching

2017 ◽  
Vol 122 (3) ◽  
pp. 035707 ◽  
Author(s):  
V. Kosyak ◽  
A. V. Postnikov ◽  
J. Scragg ◽  
M. A. Scarpulla ◽  
C. Platzer-Björkman
Keyword(s):  
High Temperature ◽  
Point Defect ◽  
Defect Concentration ◽  
Temperature Equilibrium

Point defect concentration relaxation and creep transients in binary oxides

1995 ◽  
Vol 43 (10) ◽  
pp. 3589-3604 ◽  
Author(s):  
M. Jiménez-Melendo ◽  
A. Domínguez-Rodríguez ◽  
J. Castaing
Keyword(s):  
Point Defect ◽  
Defect Concentration ◽  
Binary Oxides

scholarly journals Matthiessen’s rule inMgB2: Resistivity andTcas a function of point defect concentration

2007 ◽  
Vol 76 (13) ◽  
Author(s):  
B. Sipos ◽  
N. Barisic ◽  
R. Gaal ◽  
L. Forró ◽  
J. Karpinski ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Concentration ◽  
Matthiessen's Rule ◽  
Matthiessen’S Rule

Effect of Impurities on the Defects in Oxides and Their Relationship to Oxidation of Metal

CORROSION ◽  
1968 ◽  
Vol 24 (11) ◽  
pp. 379-388 ◽  
Author(s):  
PER KOFSTAD
Keyword(s):  
Point Defect ◽  
Defect Structure ◽  
Oxygen Vacancies ◽  
Defect Concentration ◽  
Defect Structures ◽  
Small Deviations ◽  
Effect Of Impurities ◽  
And Control ◽  
Simple Behavior ◽  
Wagner Theory

Abstract The defect structure of the oxygen-deficient oxides of Nb2O5, Ta2O5, and ZrO2 are discussed. It is suggested that the oxygen vacancies are probably the important defects, except possibly at the most oxygen deficient part of the homogeneity ranges where interstitial cations may predominate. At high oxygen pressures, (small deviations from stoichiometry) effects of impurities become important and, in reported studies, probably determine the point defect concentration. Oxidation of Nb, Ta, Zr, resulting in growth of compact scales of Nb2O5 Ta2O5, and ZrO2, is discussed on the basis of these considerations. It is shown that effects of impurities may explain apparent deviations from the simple behavior predicted by the Wagner theory. It is emphasized that analysis and control of impurities is essential in interpretation of defect structures of oxides and defect-controlled properties and reactions.

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