scholarly journals Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching

2017 ◽  
Vol 122 (3) ◽  
pp. 035707 ◽  
Author(s):  
V. Kosyak ◽  
A. V. Postnikov ◽  
J. Scragg ◽  
M. A. Scarpulla ◽  
C. Platzer-Björkman
Keyword(s):  
High Temperature ◽  
Point Defect ◽  
Defect Concentration ◽  
Temperature Equilibrium

Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Kitano ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
H. Mikoshiba
Keyword(s):  
High Temperature ◽  
Diffusion Process ◽  
Grown Crystal ◽  
Positron Beam ◽  
Defect Concentration ◽  
Energy Beam ◽  
Oxygen Cluster ◽  
Variable Energy ◽  
Oxygen Atoms

ABSTRACTThe defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

High-Temperature Equilibrium between High-Tc Oxide and Gas Phase

1991 ◽  
Vol 163 (1) ◽  
pp. 231-240 ◽  
Author(s):  
V. I. Tsidilkovskii ◽  
I. A. Leonidov ◽  
A. A. Lakhtin ◽  
V. A. Mezrin
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
High Tc ◽  
Temperature Equilibrium

High temperature point defect equilibrium of undoped α-ZnP2 at zinc pressure

1986 ◽  
Vol 59 (4) ◽  
pp. 249-251
Author(s):  
A. Martinaitis ◽  
V. Karalkevičiūte ◽  
A. Sakalas ◽  
Z. Januškevičius
Keyword(s):  
High Temperature ◽  
Point Defect

Misbehavior in High Temperature Equilibrium of Water-Gas Reaction

2012 ◽  
Vol 245 ◽  
pp. 346-351
Author(s):  
Radu Dan Rugescu ◽  
Florin Radu Bacaran
Keyword(s):  
Numerical Simulation ◽  
High Temperature ◽  
Chemical Equilibrium ◽  
Solid Propellant ◽  
Combustion Products ◽  
Linearization Method ◽  
Gaseous Products ◽  
Direct Linearization ◽  
Temperature Equilibrium ◽  
Water Gas

The observation that the chemical equilibrium between the combustion products of solid propellant samples within static calorimeters is unexpectedly freezing at high temperatures is proved through a general numerical simulation of the isochoric cooling with chemical reactions between the gaseous products. A proprietary, direct linearization method of thermochemical computation is used that enables following any chemical reaction in equilibrium with high convergence. The observed chemical freezing within calorimeters is proved.

An Examination of the Mechanisms of Si Diffusion in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Shaofeng Yu ◽  
Ulrich M. Gosele ◽  
Teh Y. Tan
Keyword(s):  
Fermi Level ◽  
Point Defect ◽  
Essential Role ◽  
Defect Concentration ◽  
Experimental Results ◽  
Quantitative Models ◽  
Effect Mechanism ◽  
Level Effect

AbstractAn examination of the three available quantitative models of Si diffusion in GaAs has led to the conclusion that the Fermi-level effect mechanism plays the most essential role. In some experimental results a point defect concentration transient is involved which should be incoorporated in future models.

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