Selfconsistent field and power absorption from electron cyclotron resonance in a high-frequency plasma accelerator

1968 ◽  
Vol 18 (5) ◽  
pp. 679-679
Author(s):  
M. Brambilla
Keyword(s):  
High Frequency ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Plasma Accelerator ◽  
Electron Cyclotron ◽  
Power Absorption ◽  
High Frequency Plasma ◽  
Frequency Plasma

Letter: New Fragment Ion Production Method Using Super Cold Electrons in Electron Cyclotron Resonance Plasma

2007 ◽  
Vol 13 (5) ◽  
pp. 355-358 ◽  
Author(s):  
Masanori Kidera ◽  
Kazuya Takahashi ◽  
Shuichi Enomoto ◽  
Akira Goto ◽  
Yasushige Yano
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Production Method ◽  
Input Power ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Ion Production

We examined the fragmentation and ionization of molecules by low-temperature electrons generated by electron cyclotron resonance (ECR) plasma. We examined several types of metallocene compounds comprising a metal and 1,3-cyclopentadienes as ligands. We performed analyses using an ECR ion source (ECRIS) mass spectrometer. Consequently, we succeeded in ionizing fragments of an organometallic compound by adjusting the input power of the microwave introducing a super high-frequency plasma. Moreover, we succeeded in dynamically generating a significant quantity of fragment ions by continuously varying the input power. Information on the structure of a molecule may be acquired from this operation. Moreover, a molecule that could not be easily ionized thus far may now be ionizable when soft ionization is performed with this technique.

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

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