Local Electron Cyclotron Resonance in a Very High Frequency Neutral Loop Discharge

Author(s):  
Aleksey V. Arsenin ◽  
Vladimir G. Leiman ◽  
Vladimir P. Tarakanov
1969 ◽  
Vol 26 (6) ◽  
pp. 1507-1513 ◽  
Author(s):  
Haruhiko Abe ◽  
Masao Sugawa ◽  
Yasushi Terumichi ◽  
Shigetoshi Tanaka

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.


1970 ◽  
Vol 32 (4) ◽  
pp. 283-284
Author(s):  
M. Sugawa ◽  
H. Abe ◽  
Y. Terumichi ◽  
S. Tanaka

1969 ◽  
Vol 30 (7) ◽  
pp. 394-395 ◽  
Author(s):  
H. Abe ◽  
M. Sugawa ◽  
Y. Terumichi ◽  
S. Tanaka

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