Determination of concentration-dependent diffusion coefficients in amorphous Ni-P films studied by auger electron depth profiling

1993 ◽  
Vol 43 (9-10) ◽  
pp. 887-891 ◽  
Author(s):  
Antoni Bukaluk
Keyword(s):  
Diffusion Coefficients ◽  
Auger Electron ◽  
Depth Profiling

Determination of Hydrogen Diffusion Coefficients in F82H by Hydrogen Depth Profiling with a Tritium Imaging Plate Technique

2015 ◽  
Vol 67 (2) ◽  
pp. 379-381 ◽  
Author(s):  
M. Higaki ◽  
T. Otsuka ◽  
K. Tokunaga ◽  
K. Hashizume ◽  
K. Ezato ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Hydrogen Diffusion ◽  
Depth Profiling ◽  
Imaging Plate ◽  
Plate Technique

Determination of grain-boundary diffusion coefficients by Auger electron spectroscopy

2000 ◽  
Vol 162-163 ◽  
pp. 213-218 ◽  
Author(s):  
Z. Erdélyi ◽  
Ch. Girardeaux ◽  
G.A. Langer ◽  
L. Daróczi ◽  
A. Rolland ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Auger Electron Spectroscopy ◽  
Diffusion Coefficients ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling

2011 ◽  
Vol 306-307 ◽  
pp. 1354-1359
Author(s):  
Jiang Yong Wang
Keyword(s):  
Depth Profile ◽  
Interdiffusion Coefficient ◽  
Auger Electron ◽  
Depth Profiling ◽  
Annealed Sample ◽  
Exponential Factor ◽  
Concentration Depth Profile ◽  
Information Depth ◽  
General Method

A general method was developed for determination of interdiffusion coefficient in nanolayered structures by Auger electron spectroscopical (AES) sputter depth profiling. The procedures of this method are as follows: (1) the concentration depth profile of annealed sample is calculated from its as-grown layered structure by adopting a suitable diffusion model; (2) this diffusion concentration depth profile is convoluted with a resolution function provided by the mixing-roughness-information depth (MRI)-model and as a result a calculated AES depth profile is obtained; (3) the interdiffusion coefficient is determined by fitting the calculated AES depth profile to the measured one. As an example, the interdiffusion coefficient parameters, the pre-exponential factor and the activation energy, were determined as 4.7×10-18 m2/s and 0.76 eV, respectively, for a GexSi1-x/Si multilayered nanostructure with Ge-Si alloyed layers of 2.2, 4.3 and 2.2 nm thickness in Si matrix.

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