Model temperature dependence of the imaginary ac susceptibility in simple and double superconducting structures

1992 ◽  
Vol 42 (10) ◽  
pp. 1025-1038 ◽  
Author(s):  
Ladislav Cesnak
Keyword(s):  
Temperature Dependence ◽  
Ac Susceptibility ◽  
Model Temperature

Temperature dependence of AC-susceptibility and resistivity of AS-cast and annealed Fe73Al5Ga2P11C5B4 ribbon

2000 ◽  
Vol 215-216 ◽  
pp. 260-263 ◽  
Author(s):  
H Sassik ◽  
M Schönhart ◽  
R Grössinger ◽  
R Sato Turtelli ◽  
A Kottar
Keyword(s):  
Temperature Dependence ◽  
Ac Susceptibility

Reflection of two-dimensionality on the temperature dependence of AC susceptibility

1997 ◽  
Vol 282-287 ◽  
pp. 1991-1992
Author(s):  
P.N. Mikheenko ◽  
J. Horvat ◽  
M. Ionescu ◽  
S.X. Dou
Keyword(s):  
Temperature Dependence ◽  
Ac Susceptibility

Superconducting Behavior of Tetragonal T ‘Eu2‐xCexO4±δ

1989 ◽  
Vol 169 ◽  
Author(s):  
V. J. Melim ◽  
Weimin Peng ◽  
C.W. Kimball ◽  
B. Dabrowski ◽  
Y. Zheng ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Debye Temperature ◽  
Narrow Range ◽  
Ac Susceptibility ◽  
Reducing Conditions ◽  
Susceptibility And Resistance ◽  
The Eu

AbstractEu2.xCexCuO4±δ (0 ≤ x ≤ 0.17) has been synthesized with the tetragonal T’ structure. AC susceptibility and resistance measurements show that Eu2‐xCexCuO4±δ becomes superconducting with τc∼13 K for x= 0.15 and 0.17, when prepared under reducing conditions. The 151Eu Mossbauer shift shows that the Euvalence falls into a narrow range near Eu 3+ . The temperature dependence of the Mossbauer absorption yields a Debye temperature of 319 K for the Eu ion in Eu1.85Ce0.15CuO4±δ

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

Characterization of Inhomogeneities in Amorphous Superconductors

1985 ◽  
Vol 58 ◽  
Author(s):  
Esen E. Alp ◽  
S.K. Malik ◽  
Y. Lepetre ◽  
P.A. Montano ◽  
G.K. Shenoy
Keyword(s):  
Electrical Resistivity ◽  
Electron Diffraction ◽  
Temperature Dependence ◽  
Flux Pinning ◽  
Ac Susceptibility ◽  
Exafs Spectroscopy ◽  
Superconducting Properties ◽  
Critical Fields ◽  
Upper Critical Fields

ABSTRACTThe structure and superconducting properties of rapidly quenched Zr—Ni and Zr—V alloys have been studied by XRD,EXAFS spectroscopy,TEM,electron diffraction,ED, electrical resistivity and ac susceptibility measurements. Amorphous Zr66Ni34 ribbons quenched with different cooling rates were also examined by flux pinning measurements. Characteristic differences are observed in the flux pinning mechanisms of microcrystalline and amorphous samples. The temperature dependence of upper critical fields have been measured down to 0.4 K and the results are analyzed in terms of WHH theory.

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