Some aspects of doping mechanism in Polyschwefelnitrid (SN)x

1985 ◽  
Vol 263 (8) ◽  
pp. 631-637 ◽  
Author(s):  
A. Kawaguchi ◽  
S. Isoda ◽  
J. Petermann ◽  
K. Katayama
Keyword(s):  
Author(s):  
Ilaria Bargigia ◽  
Lisa R. Savagian ◽  
Anna M. Österholm ◽  
John R. Reynolds ◽  
Carlos Silva

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2021 ◽  
Author(s):  
Marise Garcia-Batlle ◽  
Germà Garcia-Belmonte ◽  
Smaïl Amari ◽  
Julien Zaccaro ◽  
Eric Gros-Daillon ◽  
...  

Author(s):  
Jenna L Sartucci ◽  
Arindam Maity ◽  
Manikandan Mohanan ◽  
Jeffery A. Bertke ◽  
Miklos Kertesz ◽  
...  

Understanding the doping mechanism in organic semiconductors and generating molecular design rules to control the doping process is crucial to improve the performance of organic electronics. Even though controlling the...


1987 ◽  
Vol 97-98 ◽  
pp. 495-498 ◽  
Author(s):  
C.S. Nichols ◽  
L.H. Yang ◽  
C.Y. Fong

2018 ◽  
Vol 120 ◽  
pp. 747-752 ◽  
Author(s):  
Z. Laghfour ◽  
S. Aazou ◽  
M. Taibi ◽  
G. Schmerber ◽  
A. Ulyashin ◽  
...  

2010 ◽  
Vol 26 (03) ◽  
pp. 663-668
Author(s):  
ZHAI Xiao-Hui ◽  
◽  
◽  
LONG Hui-Jin ◽  
DONG Jiang-Zhou ◽  
...  

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