Study of the 2p 1/2 ? excitation probability in collision systems withZ 1+Z 2>150 using line width analysis

1980 ◽  
Vol 298 (1) ◽  
pp. 1-6 ◽  
Author(s):  
S. Hagmann ◽  
P. Armbruster ◽  
H. -H. Behncke ◽  
D. Liesen ◽  
P. H. Mokler
Keyword(s):  
Line Width ◽  
Line Width Analysis ◽  
Excitation Probability

Line width analysis of a tunable optical filter based on free-space optics

Optik ◽  
2014 ◽  
Vol 125 (21) ◽  
pp. 6488-6490 ◽  
Author(s):  
Bingcheng Mo ◽  
Rui Zhong ◽  
Zhujun Wan
Keyword(s):  
Line Width ◽  
Free Space ◽  
Optical Filter ◽  
Free Space Optics ◽  
Space Optics ◽  
Tunable Optical Filter ◽  
Line Width Analysis

EMR line-width analysis of CHCl3 solution of bis(ethylacetoacetato)copper(II) complex

Polyhedron ◽  
1994 ◽  
Vol 13 (3) ◽  
pp. 469-474 ◽  
Author(s):  
B.S. Prabhananda ◽  
N.D. Yordanov ◽  
N. Patev
Keyword(s):  
Line Width ◽  
Line Width Analysis

Sentence Insertions Detected Through Ink, ESDA, and Line Width Analysis

1992 ◽  
Vol 37 (6) ◽  
pp. 13363J
Author(s):  
Susan L. Fortunato ◽  
Larry F. Stewart
Keyword(s):  
Line Width ◽  
Line Width Analysis

scholarly journals Tuning exciton diffusion, mobility and emission line width in CdSe nanoplatelets via lateral size

Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23521-23531
Author(s):  
Alexander W. Achtstein ◽  
Sabrine Ayari ◽  
Sophia Helmrich ◽  
Michael T. Quick ◽  
Nina Owschimikow ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Emission Line ◽  
Line Width ◽  
Theoretical Modeling ◽  
Diffusion Mobility ◽  
Lateral Size ◽  
Exciton Diffusion ◽  
Line Width Analysis

We investigate the lateral size tunability of the exciton diffusion coefficient and mobility in colloidal quantum wells by means of line width analysis and theoretical modeling.

Strength of iron under pressure up to 55GPa from X-ray diffraction line-width analysis

2006 ◽  
Vol 67 (9-10) ◽  
pp. 2197-2202 ◽  
Author(s):  
A.K. Singh ◽  
A. Jain ◽  
H.P. Liermann ◽  
S.K. Saxena
Keyword(s):  
Line Width ◽  
Diffraction Line ◽  
X Ray Diffraction ◽  
X Ray ◽  
Line Width Analysis

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent
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