scholarly journals Tuning exciton diffusion, mobility and emission line width in CdSe nanoplatelets via lateral size

Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23521-23531
Author(s):  
Alexander W. Achtstein ◽  
Sabrine Ayari ◽  
Sophia Helmrich ◽  
Michael T. Quick ◽  
Nina Owschimikow ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Emission Line ◽  
Line Width ◽  
Theoretical Modeling ◽  
Diffusion Mobility ◽  
Lateral Size ◽  
Exciton Diffusion ◽  
Line Width Analysis

We investigate the lateral size tunability of the exciton diffusion coefficient and mobility in colloidal quantum wells by means of line width analysis and theoretical modeling.

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

2018 ◽  
Vol 52 (1) ◽  
pp. 93-99 ◽  
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. G. Kuzmenkov ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Line Width ◽  
Single Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Observation of a non-constant Cd diffusion coefficient during the thermal annealing of Zn1-Cd Se quantum wells

2020 ◽  
Vol 846 ◽  
pp. 155698
Author(s):  
Miguel Ulises Salazar-Tovar ◽  
Frantisek Sutara ◽  
Isaac Hernández-Calderón
Keyword(s):  
Diffusion Coefficient ◽  
Quantum Wells ◽  
Thermal Annealing

Dynamics of exciton diffusion in SiGe quantum wells on assV-groove patterned Si substrate

1995 ◽  
Vol 52 (7) ◽  
pp. 5132-5135 ◽  
Author(s):  
N. Usami ◽  
H. Akiyama ◽  
Y. Shiraki ◽  
S. Fukatsu
Keyword(s):  
Quantum Wells ◽  
Si Substrate ◽  
Exciton Diffusion ◽  
Sige Quantum Wells

The effects of heavy atoms on the exciton diffusion properties in photoactive thin films of tetrakis(4-carbomethoxyphenyl)porphyrins

2015 ◽  
Vol 3 (6) ◽  
pp. 1243-1249 ◽  
Author(s):  
Angy L. Ortiz ◽  
Graham S. Collier ◽  
Dawn M. Marin ◽  
Jennifer A. Kassel ◽  
Reynolds J. Ivins ◽  
...  
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Heavy Atoms ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length ◽  
Quenching Efficiency ◽  
Diffusion Properties

The exciton diffusion coefficient (D) and exciton diffusion length (LD) for three tetrakis(4-carbomethoxyphenyl)porphyrins were obtained by fitting the quenching efficiency and PL lifetime to a 3D exciton Monte Carlo ediffusion model.

Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy

1995 ◽  
Vol 402 ◽  
Author(s):  
D. J. Howard ◽  
I. De Wolf ◽  
H. Bender ◽  
K. Maex
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Cross Section ◽  
Line Width ◽  
Silicon Substrate ◽  
Theoretical Modeling ◽  
Micro Raman Spectroscopy ◽  
Thermal Oxide ◽  
Stress Profiles ◽  
Cobalt Silicides

AbstractThe application of CoSi2 in ever shrinking Si CMOS source-drain technologies demands a better knowledge of the states of stress caused by the formation of cobalt-silicides in Si. In this study the variation in local mechanical stress in the silicon substrate near arrays of polycrystalline cobalt-silicide lines was investigated by micro-Raman spectroscopy. The lines were formed by annealing Co sputtered in windows in lithographically patterned, thermal oxide coated Si wafers. The CoSi2 lines varied in width from ˜0.25 to 5.0μ, in number from 2 to 7, and in thickness from ˜ 10 to 230nm. The spacing between lines was 1 and 3 times the line width.Trends in the Si stress between CoSi2 lines are described as a function of line width and line thickness. From the stress measured in the Si, information is obtained about the stress in the CoSi2 lines. In addition, the Si stress due to lines of primarily CoSi phase (monosilicide) is compared with the Si stress due to polycrystalline-CoSi2 (disilicide) lines.Cross section TEM and SEM micrographs of the CoSix line morphologies are used to aid the description of the resulting stress profiles. Some theoretical modeling of the stress in the Si due to the CoSix lines is presented for comparison with the micro-Raman spectroscopy results.

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

1988 ◽  
Vol 52 (10) ◽  
pp. 798-800 ◽  
Author(s):  
M. Krahl ◽  
J. Christen ◽  
D. Bimberg ◽  
G. Weimann ◽  
W. Schlapp
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Spontaneous Emission ◽  
Line Shape ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Exciton Diffusion and Carrier Collection in Strained Si1-xGex/Si Quantum Wells

1993 ◽  
Author(s):  
S. Fukatsu ◽  
K. Muraki ◽  
Y. Takahashi ◽  
Y. Shiraki
Keyword(s):  
Quantum Wells ◽  
Exciton Diffusion ◽  
Carrier Collection
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