Altered results for orbital and spin susceptibilities by inclusion of the diamagnetic contribution of the valence electrons in the evaluation of an Einstein de Haas experiment

1983 ◽  
Vol 50 (3) ◽  
pp. 217-221 ◽  
Author(s):  
J. Benkowitsch ◽  
H. Winter
Keyword(s):  
Valence Electrons ◽  
Diamagnetic Contribution

Inelastic Electron Scattering from Valence Electrons in Aluminum

1976 ◽  
Vol 34 ◽  
pp. 462-463
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
Electron Scattering ◽  
Single Scattering ◽  
Three Dimensions ◽  
Inelastic Electron ◽  
Weak Beam ◽  
Scattering Spectrum ◽  
Valence Electrons ◽  
Diffraction Patterns ◽  
Electronic Scattering

We wish to report in this paper measurements of the inelastic scattering component due to the collective excitations (plasmons) and single particlehole excitations of the valence electrons in Al. Such scattering contributes to the diffuse electronic scattering seen in electron diffraction patterns and has recently been considered of significance in weak-beam images (see Gai and Howie) . A major problem in the determination of such scattering is the proper correction for multiple scattering. We outline here a procedure which we believe suitably deals with such problems and report the observed single scattering spectrum.In principle, one can use the procedure of Misell and Jones—suitably generalized to three dimensions (qx, qy and #x2206;E)--to derive single scattering profiles. However, such a computation becomes prohibitively large if applied in a brute force fashion since the quasi-elastic scattering (and associated multiple electronic scattering) extends to much larger angles than the multiple electronic scattering on its own.

Valence state analysis of elements by EPMA and its application

1990 ◽  
Vol 48 (2) ◽  
pp. 230-231
Author(s):  
Chen Liqing ◽  
Liu Zuqin ◽  
Zhang Wei
Keyword(s):  
Valence State ◽  
Line Intensities ◽  
Valence States ◽  
Valence Electrons ◽  
Fe And Mn ◽  
Intensity Ratios ◽  
State Analysis

Valence state analyses of Fe and Mn in oxides by EPMA have been reported in literature. In this paper, the effects of valence state on intensity ratios ILα/IKα and ILα/ILβ of Cu, Ni, Co, Fe, Mn, Cr and their oxides, and on intensity ratios ILβ2/ILα1 and ILγ1/ILα1 of Mo, Nb, Zr and their oxides were studied. It was observed that intensity ratios change with valence states in accordance with some regularities, and these effects could be utilized for analyzing the valence states of catalysts.Valence state analysis of elements by EPMA is based on the fact that changes in the states of valence electrons in the outer shells of an atom cause corresponding changes in line intensities. The M electrons of Cu, Ni, Co, Fe, Mn, Cr and the N electrons of Mo, Nb, Zr are valence electrons. Line Kα1,2 and six lines of L are produced from the transitions of K-L2,3 and L-M or L-N respectively.

A Latent Issue of Via Resistance: Mechanism and Solution

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Chemical Mechanical Planarization ◽  
Resistance Mechanism ◽  
Formation Enthalpy ◽  
Metal Line ◽  
Device Failure ◽  
Valence Electrons ◽  
Wafer Processing ◽  
Field Failure ◽  
And Tungsten

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.

Triatomic molecules

2018 ◽  
Author(s):  
John H. D. Eland ◽  
Raimund Feifel
Keyword(s):  
Degrees Of Freedom ◽  
Normal Modes ◽  
Electronic States ◽  
Triatomic Molecules ◽  
Doubly Charged Ions ◽  
Spectral Bands ◽  
Valence Electrons ◽  
Doubly Charged ◽  
Charged Ions ◽  
Double Ionisation

Double ionisation of the triatomic molecules presented in this chapter shows an added degree of complexity. Besides potentially having many more electrons, they have three vibrational degrees of freedom (three normal modes) instead of the single one in a diatomic molecule. For asymmetric and bent triatomic molecules multiple modes can be excited, so the spectral bands may be congested in all forms of electronic spectra, including double ionisation. Double photoionisation spectra of H2O, H2S, HCN, CO2, N2O, OCS, CS2, BrCN, ICN, HgCl2, NO2, and SO2 are presented with analysis to identify the electronic states of the doubly charged ions. The order of the molecules in this chapter is set first by the number of valence electrons, then by the molecular weight.

scholarly journals Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Wang ◽  
Yongpeng Shi ◽  
Mingfeng Liu ◽  
Ao Zhang ◽  
Yi-Lun Hong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Layer Structure ◽  
Atomic Layer ◽  
Type I ◽  
Hybrid Functional ◽  
Functional Theory ◽  
Valence Electrons ◽  
Nonmagnetic Metals ◽  
Standard Density

AbstractThe search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MA2Z4 monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS2-type monolayer MZ2 into an InSe-type monolayer A2Z2. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSi2N4 and MnBi2Te4 that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ2 and A2Z2, leading to diverse electronic properties for MA2Z4, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)Ga2Te4 are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSi2P4 is a ferromagnetic semiconductor and TaSi2N4 is a type-I Ising superconductor. Moreover, WSi2P4 is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MA2Z4 with unusual electronic properties to draw immediate experimental interest.

Zur Kenntnis der Dihalogen-tris-(4-dimethylamino-phenyl)-Verbindungen von Phosphor, Arsen, Antimon und Wismut / Dihalogeno-tris- (4-dimethylamino-phenyl) -Compounds of Phosphorus, Arsenic, Antimony, and Bismuth

1972 ◽  
Vol 27 (6) ◽  
pp. 591-595 ◽  
Author(s):  
Jörn-Michael Keck ◽  
Günter Klar
Keyword(s):  
Chemical Shift ◽  
Quantum Number ◽  
Principal Quantum Number ◽  
Valence Electrons ◽  
Phenyl Compounds ◽  
Atomic Parameters

The synthesis of the dihalogeno-tris-(4-dimethylamino-phenyl)-compounds Ar2EX2 (E = P, As, Sb; X = Cl, Br, J and E = Sb, X = F; E = Bi, X = Cl) is described. A generally valid correlation between the chemical shift of the n.m.r. signal of an atom and the atomic parameters electronegativity and principal quantum number of valence electrons is deduced.

X-ray photoemission spectra of valence electrons in V3X and Nb3X compounds

1977 ◽  
Vol 21 (2) ◽  
pp. 239-243 ◽  
Author(s):  
E.Z. Kurmaev ◽  
F. Werfel ◽  
O. Brümmer ◽  
R. Flükiger
Keyword(s):  
X Ray ◽  
Valence Electrons

scholarly journals Tetramer Compound of Manganese Ions with Mixed Valence [MnII MnIII MnIV] and Its Spatial, Electronic, Magnetic, and Theoretical Studies

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 447 ◽  
Author(s):  
Cándida Pastor-Ramírez ◽  
Rafael Ulloa ◽  
Daniel Ramírez-Rosales ◽  
Hugo Vázquez-Lima ◽  
Samuel Hernández-Anzaldo ◽  
...  
Keyword(s):  
Mixed Valence ◽  
Magnetic Behavior ◽  
Local Geometry ◽  
Spectroscopic Techniques ◽  
Theoretical Studies ◽  
The Novel ◽  
Manganese Ions ◽  
Computational Calculations ◽  
Valence Electrons ◽  
Coordination Reaction

Using different spectroscopic techniques and computational calculations, we describe the structural and electromagnetic relationship that causes many interesting phenomena within a novel coordination compound with mixed valence manganese (II, III and IV) in its crystal and powder state. The novel compound [MnII MnIII MnIV(HL)2(H2L)2(H2O)4](NO3)2(H2O) 1 was obtained with the Schiff base (E)-2-((2-hydroxybenzylidene)amine)-2-(hydroximethyl)propane-1,3-diol, (H4L), and Mn(NO3)2.4H2O. The coordination reaction was promoted by the deprotonation of the ligand by the soft base triethylamine. The paper’s main contribution is the integration of the experimental and computational studies to explain the interesting magnetic behavior that the mixed valence manganese multimetallic core shows. The results presented herein, which are rarely found for Mn(II), (III) and (IV) complexes, will contribute to the understanding of the magnetic communication generated by the valence electrons and its repercussion in the local geometry and in the overall crystalline structure.

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